1SMA5922BT3 Allicdata Electronics
Allicdata Part #:

1SMA5922BT3OSTR-ND

Manufacturer Part#:

1SMA5922BT3

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 7.5V 1.5W SMA
More Detail: Zener Diode 7.5V 1.5W ±5% Surface Mount SMA
DataSheet: 1SMA5922BT3 datasheet1SMA5922BT3 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.14288
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 7.5V
Tolerance: ±5%
Power - Max: 1.5W
Impedance (Max) (Zzt): 3 Ohms
Current - Reverse Leakage @ Vr: 2.5µA @ 6V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Base Part Number: SMA5922
Description

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Diodes - Zener - Single

The 1SMA5922BT3 is a single zener diode, which is a two-terminal electronic device that uses current to resist potential changes. It is a specific type of diode that allows current to flow in a single direction, while blocking and protecting against potential reverse voltages. It is a variation on the classic diode circuit, with the addition of antilog and zero threshold functions.

Application Field

1SMA5922BT3 is a diodes specifically designed for voltage suppression applications, such as AC mains overvoltage protection, surge protection, and voltage regulation in various electronic circuits. These are commonly used in modern thin and lightweight products, such as cell phones, gaming systems, flat-panel TVs, and digital cameras. Other applications may include power semiconductor circuits, such as switching power supplies, and automobile systems.

Working Principle

The 1SMA5922BT3 works via a principle known as avalanche breakdown. Avalanche breakdown occurs when the reverse voltage applied to a PN junction exceeds a certain level. This causes electrons and holes to combine, creating a large number of charge carriers and producing an intense electric field. This electric field is strong enough to cause additional electrons and holes to be swept across the depletion region, causing a large current to flow in the reverse direction.

The breakdown voltage is determined by the dopant concentration of the semiconductor material. The higher the dopant concentration, the greater the breakdown voltage will be. This allows the device to be specifically designed for a precise breakdown voltage. In the case of 1SMA5922BT3, this breakdown voltage is 5.9V +/- 1%. This allows the device to be used for a variety of voltage protection applications.

When the 1SMA5922BT3 is operating normally, it acts like a regular diode and will conduct current in the forward direction while blocking it in the reverse direction. When a reverse voltage is applied to the device, the voltage will increase until it reaches the breakdown voltage. At this point the device will allow current to flow in both directions. This is known as the zero-voltage state.

The 1SMA5922BT3 also includes a diode clamp feature. This feature limits the voltage applied to the diode, which ensures stable operation across a wide voltage range. This feature also helps protect against ESD (electrostatic discharge) damage.

Conclusion

The 1SMA5922BT3 is a single zener diode designed for voltage suppression applications. It follows the principle of avalanche breakdown, which allows for the device to have a precise breakdown voltage of 5.9V +/- 1%. Additionally, the device is equipped with a diode clamp feature, which helps protect it against ESD damage and provides stable operation over a wide voltage range. This device is suitable for a variety of applications, including power semiconductor circuits, cell phones, flat-panel TVs, and digital cameras.

The specific data is subject to PDF, and the above content is for reference

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