| Allicdata Part #: | 1SMA75AT3G-ND |
| Manufacturer Part#: |
1SMA75AT3G |
| Price: | $ 0.16 |
| Product Category: | Circuit Protection |
| Manufacturer: | ON Semiconductor |
| Short Description: | TVS DIODE 75V 121V SMA |
| More Detail: | N/A |
| DataSheet: | 1SMA75AT3G Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 5000 +: | $ 0.14288 |
| Voltage - Clamping (Max) @ Ipp: | 121V |
| Supplier Device Package: | SMA |
| Package / Case: | DO-214AC, SMA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | 180pF @ 1MHz |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 400W |
| Current - Peak Pulse (10/1000µs): | 3.3A |
| Series: | -- |
| Voltage - Breakdown (Min): | 83.3V |
| Voltage - Reverse Standoff (Typ): | 75V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Obsolete |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
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TVS (transient voltage suppression) diodes are electrical components designed to protect other devices from high-voltage or high-energy surges. The 1SMA75AT3G TVS diode is specifically designed for use in external peripherals such as printers, keyboards and mice. The 1SMA75AT3G is rated at a maximum breakdown voltage of 10V, a peak pulse current of 75A, and a maximum clamping voltage of 14V .
Application Field
The 1SMA75AT3G is used to protect sensitive signals on computer peripheral devices, such as USB cables, from ESD (electrostatic discharge) events. ESD events, which can be caused by contact with an ESD source (such as a person or an object) or by induced body voltages, can cause permanent damage to electronic components. The 1SMA75AT3G is designed to absorb the energy from the ESD events and limit the voltage transmission to prevent permanent damage to the signaling and communication circuitry of the protected device.
Working Principle
The 1SMA75AT3G is composed of a junction between two different semiconductor materials, the p-type and the n-type. When a voltage higher than the max breakdown voltage of 10V is applied to the diode, it triggers a semiconductor breakdown that causes current to flow through the device. This current is then dissipated to the surrounding environment through the ground connection. This current flowing through the diode causes the diode to clamp the current at its current limiting threshold of 75A and reduce the voltage across the device to 14V. The 1SMA75AT3G thus protects the connected devices from ESD events and further damage.
The specific data is subject to PDF, and the above content is for reference
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1SMA75AT3G Datasheet/PDF