1SMB5929 R5G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are the most fundamental building block in semiconductor devices used in electronics. The 1SMB5929 R5G is a single Zener diode with a breakthrough voltage of 5V. It is built on a planar construction and has an epi layer for increasing avalanche breakdown voltage. It is widely used in current mirror circuits and reference voltage applications.

The main function of a Zener diode is to regulate voltage by providing a low voltage drop between its anode and cathode. This is achieved by allowing current to flow only in one direction. It is commonly used to regulate the voltage in a circuit. This will ensure the circuit remains functional even when the input voltage fluctuates. It can also be used to provide reverse bias protection to electronic components by limiting the current passing through them.

The 1SMB5929 R5G diode has a total power dissipation of 500mW and a maximum reverse current of 5mA at a 5V reverse voltage. Its low power consumption and low maximum forward voltage drop of 1.1V make it an ideal choice for power supply applications. It also provides considerable tolerance to voltage fluctuations when compared to other types of diodes. Its overall temperature coefficient is -2mV/°C which enables it to maintain a reliable voltage controlled voltage at a given temperature.

The 1SMB5929 R5G is well suited for applications such as current mirror circuits and reference voltage. Its low forward voltage drop and high accuracy make it a good choice for current mirrors, which are commonly used in power supplies and other electronic circuits. It can also be used to provide a reference voltage to control a voltage regulator, providing consistent output voltage over varying temperatures and line voltages.

When it comes to its working principle, the 1SMB5929 R5G has a reverse breakdown voltage of 5V. When a reverse voltage is applied to the diode, the electric field in the junction region increases. This increases the free electron concentration in the junction and causes the electrons to be swept across the junction, resulting in an increased current flow. The reverse current flow is limited by the P-N junction depletion layer capacitance and consequently the breakdown voltage remains constant.

The 1SMB5929 R5G diode has a wide range of applications in electronics. It can be used to regulate voltages in electronic circuits, protect electronic components from reverse bias, provide a reference voltage for voltage regulation and current mirror circuits. With its low power consumption and low noise operation, it is a great choice for any semiconductor device.

The specific data is subject to PDF, and the above content is for reference