23A1024T-E/SN Allicdata Electronics
Allicdata Part #:

23A1024T-E/SN-ND

Manufacturer Part#:

23A1024T-E/SN

Price: $ 1.43
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC SRAM 1M SPI 16MHZ 8SOIC
More Detail: SRAM Memory IC 1Mb (128K x 8) SPI - Quad I/O 16MHz...
DataSheet: 23A1024T-E/SN datasheet23A1024T-E/SN Datasheet/PDF
Quantity: 1000
3300 +: $ 1.29781
Stock 1000Can Ship Immediately
$ 1.43
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 1Mb (128K x 8)
Clock Frequency: 16MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.7 V ~ 2.2 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: 23A1024
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an essential component in computers and other electronic systems. It\'s where data is stored for reading, writing, rewriting or erasing and the 23A1024T-E/SN is a type of memory device. It\'s a non-volatile memory chip and it\'s used in many applications including consumer electronics, large scale industrial systems, automotive control systems and military platforms.

The 23A1024T-E/SN is a small, lightweight chip measuring in at just 8.5mm x 20.5mm and it weighs only 0.47 grams. It has a very low power consumption of just 3.2 milliwatts and it can provide a maximum data read rate of up to 10 MegaBytes/s. It has a low standby current of 0.1 milliamperes and can operate at temperatures up to 85 degrees Celsius.

The 23A1024T-E/SN is a device that incorporates a 1M-bit (128K byte) Serial EEPROM (Electrically Erasable Programmable ROM) memory array. It offers a flexible programming interface, using both parallel and serial modes. It has a wide range of protections and performance features, including a built-in photo-float and power supply monitor, self-test mode and extended address capability. The device has three selectable I/O voltage levels, as well as data and clock signal detection capability.

The 23A1024T-E/SN\'s features and benefits make it an ideal choice for applications such as industrial control and automotive systems. In industrial control systems, the device can be used for storing program parameters and data, and for long-term data storage. In automotive systems, it can be used for storing ECU parameters, ECU data logging and for long-term data storage. It has been designed to provide a secure source of data and to make sure that data is kept safe from power surges and other forms of damage.

The 23A1024T-E/SN\'s working principle is based on electrical charge stored in capacitors instead of conventional transistors. When a certain voltage is applied to the memory cell, a certain amount of electrical charge is stored in the capacitor. As a result, a specific data value is stored in the chip, even without a power source. The way the stored data is maintained is by storing the charge in the capacitors, preventing it from leaking out over time. The data remains in the chip until it is erased or written over. The chip can be configured to use different write/erase speeds depending on the application requirements.

The 23A1024T-E/SN is a reliable and efficient memory device with a long lifespan and low cost. It\'s designed to meet a plethora of application requirements in areas such as automotive control systems, industrial systems and military platforms. It\'s a high performance device with a wide range of features and protections, making it an ideal choice when it comes to data storage and retrieval.

The specific data is subject to PDF, and the above content is for reference

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