23A1024T-E/ST Allicdata Electronics
Allicdata Part #:

23A1024T-E/ST-ND

Manufacturer Part#:

23A1024T-E/ST

Price: $ 1.46
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC SRAM 1M SPI 16MHZ 8TSSOP
More Detail: SRAM Memory IC 1Mb (128K x 8) SPI - Quad I/O 16MHz...
DataSheet: 23A1024T-E/ST datasheet23A1024T-E/ST Datasheet/PDF
Quantity: 1000
2500 +: $ 1.32376
Stock 1000Can Ship Immediately
$ 1.46
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 1Mb (128K x 8)
Clock Frequency: 16MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.7 V ~ 2.2 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Base Part Number: 23A1024
Description

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Memory

The 23A1024T-E/ST is a device that is used in applications related to memory. It is a 1 Mbit, low-power and low-voltage CMOS Static Random Access Memory (SRAM) that offers low-power and high data rate operation. The device is designed to operate with a single supply voltage from 2V to 3.6V. It also features a self-refresh mode that allows the device to stay in low power idle mode for extended periods of time. Additionally, it allows for burst read operation, fast access times and wide data bus widths.

The 23A1024T-E/ST is designed for high performance, low power and low cost applications. It allows for fast access times, wide data bus widths and high data rate operation. The device is ideal for use in embedded systems, networking applications and other applications where power and size are important considerations. It is also well-suited for applications where speed, simplicity and scalability are required.

Working Principle

The 23A1024T-E/ST is a CMOS Static Random Access Memory (SRAM). It works by storing data in a specific location on a silicon wafer. This location is referred to as a memory cell or bit. The device contains multiple memory cells arranged in a rectangular grid. When data is written to a memory cell, it is stored there until it is read or overwritten by another piece of data. The device can access and write data to these memory cells quickly, allowing for high performance applications.

The device is designed to operate with a single supply voltage and does not require an external clock. In addition, the device has a self-refresh mode that allows it to stay in low-power idle mode for extended periods of time. This allows the device to conserve power and reduce power consumption.

The 23A1024T-E/ST also features fast access times, wide data bus widths and burst read operation. This allows the device to quickly read and write data and allows it to be used in high data rate applications. Additionally, the device is designed to be simple and scalable, making it easy to use in a variety of applications and allow it to be used in both small and large systems.

Conclusion

The 23A1024T-E/ST is a device designed for high performance, low power and low cost applications. It features fast access times, wide data bus widths and high data rate operation. Additionally, the device offers a self-refresh mode, allowing it to remain in low power idle mode for extended periods of time. This makes it ideal for use in embedded systems, networking applications and other applications where power and size are important considerations.

Overall, the 23A1024T-E/ST is an excellent device for use in applications related to memory. It offers low-power and high data rate operation, fast access times, wide data bus widths, burst read operation and scalability. This makes it a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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