23K256-E/P Allicdata Electronics
Allicdata Part #:

23K256-E/P-ND

Manufacturer Part#:

23K256-E/P

Price: $ 0.78
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC SRAM 256K SPI 20MHZ 8DIP
More Detail: SRAM Memory IC 256Kb (32K x 8) SPI 20MHz 8-PDIP
DataSheet: 23K256-E/P datasheet23K256-E/P Datasheet/PDF
Quantity: 1000
300 +: $ 0.70730
Stock 1000Can Ship Immediately
$ 0.78
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 256Kb (32K x 8)
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP
Base Part Number: 23K256
Description

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23K256-E/P is a memory chip used mainly in communications and embedded applications. It is a type of serial EEPROM (Electrically Erasable Programmable Read-Only Memory) memory with a 256-Kbit capacity present on a small 8-pin surface mount package. The size of the memory chip is tiny thus making it suitable to be used in a breadth of applications which might require a small footprint.

Application field

23K256-E/P is mainly used for asynchronic data storage and retrieval in communications and embedded applications. It can be used to store permanent configuration or program data in wireless radio nodes and transceivers. Additionally, it can be an ideal choice for memory requirements in industrial automation processes and other industrial applications.

The use of this memory is also prevalently found in automotive-embedded solutions where it is a great fit due to its small size and non-volatility. Also its features make it ideal for portable applications and helps in achieving smaller form factors.

Working Principle

The serial EEPROM works by implementing flash cells that can be programmed one by one. The cell voltage is monitored for determining the corresponding state of the cell and the data are stored in most significant bit (MSB) first. For erasing the data across the entire chip, a triggered event sends 12V electrical pulses to erase the entire cell. This happens as the resonance frequency of the memory cell lies at a voltage above 7V.

In order to write data, a Program algorithm is used in which an electrical pulse is sent to the chip that is higher than the required voltage for the writing process. This pulse is 20V instead of the normal 12V pulse. This high pulse when passes through the cell causing the cell to be erased and also the data is written into it. Reading the data is possible as the MSB data is output as a logical one while the LSB as a zero.

Advantages

The main advantage of owning a 23K256-E/P is that the physical size is extremely small which makes it suitable for applications that may require a small size. The chip is suitable for applications where non-volatility is a priority and also due to increased efficiencies to keep their cost low. The over all byte capacity varies from 16Kbits to 512Kbits and this too is an added advantage.

The rated speed of the memory is 5ms for write and 2 ms for read operations and thus these are some of the primary advantages of the serial EEPROM that makes it suitable for a wide range of applications.

Disadvantages

The writing operations are comparatively slower than that of SRAM which thus make it unsuitable for applications which require faster write operations. Also, the serial EEPROM is prone to time-dependent bit failure while the traditional EEPROMs have erased cycles which have a limited lifetime.

A further disadvantage is that it requires an external logic as the part never provides a chip select line. Also, the rated speed of the serial EEPROM is slower than some other memories, so it can be unsuitable for applications which need higher speeds.

Conclusion

The 23K256-E/P is a small nonvolatile memory, ideal for communications and embedded applications. It has advantages such as small size and low total cost, but it is usually slower than SRAM and also has limited write cycles. It is a useful nonvolatile memory, but it requires careful consideration to ensure that it meets the requirements of the application.

The specific data is subject to PDF, and the above content is for reference

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