23K256T-E/ST Allicdata Electronics
Allicdata Part #:

23K256T-E/ST-ND

Manufacturer Part#:

23K256T-E/ST

Price: $ 0.78
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC SRAM 256K SPI 20MHZ 8TSSOP
More Detail: SRAM Memory IC 256Kb (32K x 8) SPI 20MHz 8-TSSOP
DataSheet: 23K256T-E/ST datasheet23K256T-E/ST Datasheet/PDF
Quantity: 1000
2500 +: $ 0.71379
Stock 1000Can Ship Immediately
$ 0.78
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 256Kb (32K x 8)
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Base Part Number: 23K256
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory devices are essential for storing, processing and retrieving data in computers, mobile devices and other systems. The 23K256T-E/ST is a type of memory device that offers fast access to stored data and provides efficient storage options. This article will discuss the application field and working principle of the 23K256T-E/ST.

Application Field of 23K256T-E/ST

The 23K256T-E/ST is widely used in computers, consumer electronics, embedded systems and other applications. It offers fast access to stored data which makes it suitable for applications that require high speed performance. It also provides efficient storage options which makes it suitable for applications that require large storage capacity. The 23K256T-E/ST is ideal for use in mobile devices, consumer electronics and embedded systems that need to access data quickly and efficiently.

Working Principle of 23K256T-E/ST

The 23K256T-E/ST is a type of Static Random Access Memory (SRAM) device. Unlike Dynamic Random Access Memory (DRAM) devices, SRAM does not need to be recharged periodically to retain the data stored in it. This makes SRAM devices faster and more power efficient. The 23K256T-E/ST works by reading the data that is stored in its cells. Each cell contains a bit of data and the device can read the data from each cell simultaneously. This makes the 23K256T-E/ST fast and efficient for retrieving data.

The 23K256T-E/ST also has a feature called burst mode. When the device is in burst mode, it can access multiple cells at once, allowing it to read larger chunks of data more quickly. This makes the device even more efficient when accessing large amounts of data, such as those found in multimedia applications.

The 23K256T-E/ST is also designed to be low power. It can operate at low voltage and current levels, making it ideal for use in battery powered devices. It also uses a low power idle mode, which reduces the amount of power consumed when the device is not in use. This makes the 23K256T-E/ST an ideal choice for devices that require low power consumption.

Conclusion

The 23K256T-E/ST is a type of memory device that offers fast access to stored data and provides efficient storage options. It is ideal for use in computers, mobile devices, consumer electronics and embedded systems that need to access data quickly and efficiently. The 23K256T-E/ST is a Static Random Access Memory (SRAM) device that does not need to be recharged periodically and has a feature called burst mode that allows it to access multiple cells at once for faster data retrievals. Additionally, the 23K256T-E/ST is designed to be low power, making it ideal for use in battery powered devices.

The specific data is subject to PDF, and the above content is for reference

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