24LC08B-E/ST

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory technology, especially integrated circuit memory technology, has been one of the most important and widely used types of electronic components since its emergence. The integrated circuit memory made of materials such as silicon oxide is called a ROM (read only memory). Nowadays, more and more innovative and advanced memory technologies are underway, such as EEPROM and flash memory. Among them, the 24LC08B-E/ST application field and working mechanism are discussed.

The 24LC08B-E/ST is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory), a kind of non-volatile memory that stores data permanently. It is used in various applications ranging from consumer electronics, automotive, medical devices and industrial automation systems. It has a wide range of operating voltages, small size, low power and good temperature characteristics, making it a preferred choice for many applications.

The 24LC08B-E/ST uses a technique called floating gate technology to provide non-volatile storage of data. This technology utilizes an insulated-gate transistor in which a piece of normally insulating material is placed between the transistor’s control gate and its internal substrates. This isolates the control gate from the internal transistors, thereby allowing data to be stored indefinitely. The technology is often referred to as “flash” because the stored data is retained even when the power source is removed.

The 24LC08B-E/ST can be programmed and erased through electrical signal pulses, which makes it much more convenient and efficient compared to other types of memory technology. It consists of eight internally-organised memory blocks, each capable of storing a byte. The device also supports up to three slave addresses, making it possible to access multiple devices simultaneously via a single serial bus. In addition, it has an operating temperature range of -40°C to 85°C and can withstand a maximum write/erase operation of 100,000 cycles.

The 24LC08B-E/ST provides several levels of data protection, including write protection, write protection window and status flags. Its write protection feature locks the memory for write operations and prevents accidental overwriting of data without prior user consent. The write protection window enables the user to select a specific range of addresses to be prohibited from writing. This function is especially useful for applications where data integrity needs to be preserved during erase operations. And the status flags track the number of erase/write cycles for each block, ensuring the memory’s reliability and data integrity.

In addition, the 24LC08B-E/ST features a low-power standby mode, which decreases its power consumption to a minimum when it is in an idle state. This makes the device suitable for battery-powered applications. Furthermore, its high-speed write capability (at an operating frequency of up to 5 MHz) enables fast data transfers, making it suitable for high-performance applications.

Overall, the 24LC08B-E/ST provides an efficient and reliable solution for data storage applications. It supports a wide range of operating voltages, small size, low power, write/erase operations of up to 100,000 cycles and several levels of data protections. Furthermore, its low-power standby mode allows the device to operate efficiently even when powered by a battery. All these features make it an ideal choice for applications that require reliable and durable data storage.

The specific data is subject to PDF, and the above content is for reference