24LC128-I/ST

Write Cycle Time - Word, Page:	5ms
Base Part Number:	24LC128
Supplier Device Package:	8-TSSOP
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	2.5 V ~ 5.5 V
Memory Interface:	I²C
Access Time:	900ns
Series:	--
Clock Frequency:	400kHz
Memory Size:	128Kb (16K x 8)
Technology:	EEPROM
Memory Format:	EEPROM
Memory Type:	Non-Volatile
Part Status:	Active
Packaging:	Tube

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Introduction to the 24LC128-I/ST

The 24LC128-I/ST is a 128-Kbit (16 Kbytes) serial EEPROM memory device that offers an extended operating temperature range of -40°C to 125°C. It features a single-level cell (SLC) architecture that increases production yields and data reliability. This device is offered in 8-pin PDIP and 8-pin SOIC packages.

Application Fields of the 24LC128-I/ST

The 24LC128-I/ST memory device is suitable for many embedded industrial applications where nonvolatile storage of parameters or data is required over an extended temperature range. Examples of such applications include data-logging and acquisition, computerized numeric controllers (CNCs), programmable logic controllers (PLCs), embedded control and monitoring, industrial automation systems, and communications systems.

Working Principle of the 24LC128-I/ST

The 24LC128-I/ST is an E2PROM memory chip that works using the charge-trapping methodology. Charge-trapping technology utilizes a dielectric storage medium instead of the floating gates used in flash technology. This technique allows for longer data retention times, a reduced number of program/erase cycles, better performance at higher temperatures and a more reliable lifetime of data storage.In charge-trapping memory, the charge is trapped in the dielectric layer that is positioned between two layers of polysilicon. The charge can be trapped and retrieved by applying appropriate voltages to the memory cells. To place a charging level to the cells, an intermediate voltage is first applied followed by higher set voltages. To read acell, a lower voltage is applied first, followed by a higher voltage. Usually, to write data to a memory cell, the cell is first erased by applying a higher voltage to the cell and then the data is written by applying a lower voltage.

Conclusion

The 24LC128-I/ST is a reliable and easy-to-use non-volatile memory device that is suitable for various applications in the industrial, embedded control, and communications fields. It features an extended operating temperature range of -40°C to 125°C, making it ideal for harsh-environment applications. Unlike flash technologies, the 24LC128-I/ST utilizes a single-level cell architecture for increased production yields and data reliability, as well as better performance at higher temperatures. Furthermore, the memory chip works using the charge-trapping methodology, allowing for longer data retention times and a more reliable lifetime of data storage.

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