24LC21-I/SN

Write Cycle Time - Word, Page:	10ms
Base Part Number:	24LC21
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	2.5 V ~ 5.5 V
Memory Interface:	I²C
Access Time:	900ns
Series:	--
Clock Frequency:	400kHz
Memory Size:	1Kb (128 x 8)
Technology:	EEPROM
Memory Format:	EEPROM
Memory Type:	Non-Volatile
Part Status:	Active
Packaging:	Tube

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24LC21-I/SN Memory

The 24LC21-I/SN is a low-power, serial EEPROM memory device from Microchip Technology Inc. It is manufactured using Field Gate Oxide (FTO) technology fabrication process and has 1,024-bit memory capacity. The 24LC21-I/SN is packaged in 8-pin PDIP (plastic dual in-line package).

Applications

The 24LC21-I/SN is designed to provide data storage in a wide variety of applications. It is used in automotive applications, communication systems, medical and industrial equipment, instrumentation, and consumer electronics. The low-power capability makes it ideal for use in battery-powered applications.

Features

The 24LC21-I/SN has a number of features that make it an attractive option for many applications. The low power consumption of the device translates into improved battery life for portable devices. Other features include:

• 1,024-bit memory capacity
• Low-voltage operation: only 2.5V to 5.5V
• Serial read/write operation
• 16-word buffer
• Page write capability
• 40MHz read/write speed
• 100,000 write/erase cycles per byte
• 256 bytes of durable non-volatile memory
• Data retention: >200 years
• Temperature range: -40ºC to +85ºC

Working Principle

The 24LC21-I/SN is a memory device that stores information in a non-volatile manner. It uses electrically alterable, floating-gate non-volatile memory cells, manufactured in a standard CMOS process. The memory cells can be programmed multiple times and stored in an EEPROM chip.The 24LC21-I/SN works by controlling the flow of electrons in a series of transistors. The device first reads data from the memory cells and then writes new data to the cells. The data can be written one byte at a time or multiple bytes at once using the page write command. The 24LC21-I/SN also has a buffer register, which allows for faster performance when dealing with large amounts of data.The 24LC21-I/SN is a versatile memory device which can be used in a variety of applications. Its low power consumption, high speed, and high endurance make it an excellent choice for embedded systems.

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