24LC32AT-E/ST

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The 24LC32AT-E/ST memory is a 32K bit Serial Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 4096 words of 8 bits each. It is available in 8 pin PDIP, 8 pin SOIC, 8 pin TSSOP, 8 pin WSON and 8 pin DFN packages. This device is accessed via a simple two-wire bus consisting itself of Serial Clock and Serial Data lines.

The 24LC32AT-E/ST memory is mainly used in embedded systems and applications that require a low-power, high-speed, non-volatile, reliable EEPROM for data storage. Typical applications for the 24LC32AT-E/ST include storing and updating system configuration parameters, storing security keys, storing audio and video data and as a general memory for data logging or program code.

The 24LC32AT-E/ST memory has a Organizational Multiplier supply voltage of 2.5V to 5.5V and a device current of 10 mA. It is specified from 0°C to +70°C and from -40°C to +85°C when using commercial and industrial grade EEPROMs respectively. The 24LC32AT-E/ST has an operating temperature range of -55°C to +125°C.

The 24LC32AT-E/ST memory has a simple two-wire serial interface, allowing for easy data input and output. It uses a three-wire serial protocol with the two-wire interface consisting of Serial Clock Line (SCL) and Serial Data Line (SDA). This serial bus is an open drain bus and both lines are pulled to a HIGH state with bus-level pull-up resistors. The data is written and read from the EEPROM via the transfer of 8 bit data words.

The data transfer begins when a START condition is formed and is terminated with a STOP condition. A delay is present between the START and STOP conditions to ensure the input of valid data. During the read/write operation, the EEPROM generates a BUSY signal which indicates that the EEPROM is busy processing the data, and the data transfer is complete when the BUSY signal is deasserted. The 24LC32AT-E/ST is a three-wire device and has no Acknowledge bit.

The 24LC32AT-E/ST memory is enabled by the Chip Select (CE) pin taking it low. Address bits A0-A7 select the individual words. Data is written to the EEPROM using the Write Enable (WE) pin, taking it low. When the write enable is taken low, the EEPROM can begin the write cycle. The write cycle must be a minimum of 1ms to 6ms.

The 24LC32AT-E/ST memory is also capable of performing ‘read-modify-write’ operations which allow for multiple bits to be changed in a single word. In this case, the EEPROM reads the word, modifies it, then writes the modified word back, all under control of the 24LC32AT-E/ST. This saves time since the existing data does not need to be rewritten and is useful for applications where only some bits in a word can be changed, such as configuration bits.

The 24LC32AT-E/ST memory also incorporates 2K bit of write protection which can be enabled and disabled via an additional pin using dedicated write operations. The write protection range is completely reconfigurable and can be used to protect any portion of the 8K byte EEPROM. Writing to a location in the write protected range will cause the write to fail and return an error.

In conclusion, the 24LC32AT-E/ST memory is a low-power, high-speed, non-volatile EEPROM. It is well suited for use in embedded systems and applications that require a reliable data storage solution. The 24LC32AT-E/ST has an operational temperature range of -55°C to +125°C, and can be accessed via a simple two-wire bus. It is capable of performing ‘read-modify-write’ operations and offers 2K bit of write protection. All these characteristics make this memory an ideal solution for many applications.

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