25AA080/SN Allicdata Electronics
Allicdata Part #:

25AA080/SN-ND

Manufacturer Part#:

25AA080/SN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 8K SPI 1MHZ 8SOIC
More Detail: EEPROM Memory IC 8Kb (1K x 8) SPI 1MHz 8-SOIC
DataSheet: 25AA080/SN datasheet25AA080/SN Datasheet/PDF
Quantity: 201
Stock 201Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: 25AA080
Description

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The 25AA080/SN is a member of the Serial EEPROM family with 8K-bits of non-volatile memory and a wide 2.7V to 6.25V supply voltage. This memory device is based on EPROM technology, utilizing sector architecture and high endurance. Thanks to its dual-voltage circuit design, it can support both low voltage and high voltage Vcc operation. The functionality of the 25AA080/SN can be divided into two main sections: e-fuse section, intended to program the memory contents and to validate the memory contents; and the flash memory section, which stores data.The e-fuse section contains two memory cells: a program bit and a validation bit. The program bit cell enables writing of data in the flash-memory section, while the validation bit ensures that programming has been properly performed. After programming, the validation bit must be enabled for the memory operation to be valid. In order to prevent accidental write operations, the e-fuse section is also protected from external electrical disturbances.The flash memory section is based on EPROM technology and consists of 8192 bits of flash memory, each cell capable of storing one bit of data. It can be programmed in a single byte, double byte or page mode, the last one being the fastest way to write data into the memory. Each page includes up to 256 bytes of data and can be written in as little as 2msec.The 25AA080/SN memory operates in two different modes: low voltage and high voltage. In the low voltage mode, the memory is designed to accept a Vcc of 2.7V to 3.7V. For the high voltage mode, the memory is designed to accept a voltage of 4.5V to 6.25V. This feature of the 25AA080/SN makes it an ideal device for applications which require the Vcc to be changed periodically.Overall, the 25AA080/SN is a robust and reliable memory chip with low current consumption, making it suitable for a wide range of applications. Its combination of features – such as low voltage capability and high voltage capability – make it suitable for use in various fields, including telecommunications, consumer electronics, automotive and automation. Its flexibility and high endurance make it ideal for use in embedded systems, providing a secure, reliable and long-term memory storage solution.

The specific data is subject to PDF, and the above content is for reference

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