28S161-102N5 Allicdata Electronics

28S161-102N5 Uncategorized

Allicdata Part #:

28S161-102N5-ND

Manufacturer Part#:

28S161-102N5

Price: $ 5.17
Product Category:

Uncategorized

Manufacturer: Rosenberger
Short Description: QMA STRAIGHT PLUG
More Detail: N/A
DataSheet: 28S161-102N5 datasheet28S161-102N5 Datasheet/PDF
Quantity: 1000
50 +: $ 4.69224
Stock 1000Can Ship Immediately
$ 5.17
Specifications
Series: *
Part Status: Active
Description

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28S161-102N5 is a silicon dioxide based ceramic capacitor. It is primarily used for applications such as filtering, decoupling, bypassing, and temperature compensation. Ceramic capacitors of this type are used in various industries, including aerospace, automotive, telecommunications, medical, and industrial electronics. This document explains the application field and working principle of the 28S161-102N5 ceramic capacitor.

The 28S161-102N5 capacitor is a surface mount capacitor primarily used for high-frequency applications. It is rated for operation up to 100V, with a capacitance of 0.001μF (1nF). The ceramic material used for construction is EIA class 1, which has relatively good temperature stability as compared to other types of ceramic capacitors. The package size is 0.6mm x 0.3mm, with a thickness of 0.2mm.

The primary benefit of the 28S161-102N5 is its small size and high capacitance value, allowing for high-performance applications in tight spaces. The small size also means it is well suited for use in mobile and portable applications, as well as densely populated printed circuit boards (PCBs). As it is a surface mount component, it also require no wire soldering for installation.

The 28S161-102N5 is a good choice for applications that require decoupling, or the isolation of high-frequency signals from the system power bus. Decoupling is beneficial in minimizing noise, reducing power supply ripple, and increasing the system’s overall performance. It is also used for bypassing, which is the process of providing a low-impedance path for high-frequency signal currents to bypass high-impedance circuitry and return to ground.

The 28S161-102N5 also has uses in temperature compensation, where it is used to enhance the accuracy and stability of an electronic system by compensating for temperature drifts. This is achieved by implementing temperature coefficient based compensation circuits. This type of capacitor also benefits low-noise amplifier (LNA) applications, helping reduce spurious emissions.

The working principle of a 28S161-102N5 is based on the four physical principles of electrostatics; charge, electric field, voltage, and capacitor. An electric field is introduced between two conductors when a voltage is applied to them; the intensity of the electric field is provided by the electric potential (voltage). When electric current flows between the two conductors, it creates an electrical charge, which produces a voltage across the conductors. This voltage is then stored in the form of energy by the capacitor. The energy will remain stored until it is released or transferred to another component when the voltage is removed.

In the case of the 28S161-102N5, voltage is applied to the two conductors, causing the movement of charge. As the voltage is applied and removed, charge builds up and dissipates, causing an oscillating electric field between the two conductors. This oscillation creates an electrical charge and stores energy in the capacitor until the voltage is removed, releasing the stored energy. This process is called dielectric absorption, and it is the primary mechanism behind the capacitors operation.

In summary, the 28S161-102N5 is a silicon dioxide based ceramic capacitor primarily used for applications such as filtering, decoupling, bypassing, and temperature compensation. It is a surface mount component with a small size, high capacitance value, and ability to withstand temperatures up to 100V. The principle of operation is based on electrostatics, where an electrical field is introduced between two conductors when a voltage is applied, causing an oscillating electric field and dielectric absorption.

The specific data is subject to PDF, and the above content is for reference

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