293D105X0010A2TE3

Operating Temperature:	-55°C ~ 125°C
Failure Rate:	--
Features:	General Purpose
Manufacturer Size Code:	A
Lead Spacing:	--
Height - Seated (Max):	0.071" (1.80mm)
Size / Dimension:	0.126" L x 0.063" W (3.20mm x 1.60mm)
Package / Case:	1206 (3216 Metric)
Mounting Type:	Surface Mount
Lifetime @ Temp.:	--
Series:	TANTAMOUNT®, 293D
ESR (Equivalent Series Resistance):	9.6 Ohm
Type:	Molded
Voltage - Rated:	10V
Tolerance:	±20%
Capacitance:	1µF
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Tantalum Capacitors

Tantalum capacitors are small devices which helps to store electrical energy and provide an electrical signal from one point to another. The 293D105X0010A2TE3 is a type of tantalum capacitor which has given benefits to all types of applications.

What is 293D105X0010A2TE3?

293D105X0010A2TE3 is a type of chip capacitor, or a discrete component, composed of a ceramic disc which is coated with tantalum powder and conductive substances. It is typically used in circuits, especially in portable electronics such as PDAs and laptops, as they are ideal when there are space limitations as these components are low in profile and occupy small area.

Application Field and Working Principle of 293D105X0010A2TE3

The 293D105X0010A2TE3 capacitor is mainly used in cellphone circuits and computer systems, offering great performance and flexibility when it comes to its working. Its operation is based on the principle of capacitance, the basic property of all capacitors, completely relying on the existence of two conducting surfaces where electric potential is accumulated on one of them and discharged from the other.The 293D105X0010A2TE3 capacitor consists of two small ceramic discs, separated by a thin film of Oxford dielectric that is insulated against electrical flow. It is this dielectric that acts as a barrier, preventing the electrostatic sharing of electrical charges between the two plates. When a voltage is applied to the terminal plates of the capacitor, an electric field is generated across the dielectric and charges start to accumulate on its outer surfaces.As the supply voltage increases, the dielectric begins to act like a conductor, allowing electrical current to flow through it. The current then flows between the two terminals of the capacitor, eventually discharging all the accumulated electrical charges. This process allows the capacitor to store and release energy, again and again, within a period of seconds.The 293D105X0010A2TE3 capacitor offers excellent performance in terms of its capacitance and voltage rating. It has a capacitance of 105x10^-12F and can withstand a maximum voltage of 10V, making it an ideal choice for applications where a high level of performance is required. Its small size makes it ideal for designs where space is limited.

Benefits of 293D105X0010A2TE3

The 293D105X0010A2TE3 capacitor offers many benefits for applications. One of its most notable benefits is its small size and low profile, which makes it perfect for use in situations where space is restricted. Additionally, it has excellent electrical performance, with a wide range of capacitance values, which can range from 10 picofarads to several hundred picofarads.It is also highly reliable and stable, with low leakage currents and low-ESR (Equivalent Series Resistance). This means that it can be connected to any kind of circuit and it will not affect the performance of the device. The 293D105X0010A2TE3 is also temperature stable, meaning that it can be used in a wide range of temperature environments.

Conclusion

The 293D105X0010A2TE3 is a type of tantalum capacitor which is ideal for applications where a high level of electrical performance is required. It offers great capacitance values, a wide voltage range, and a low profile which makes it perfect for use in applications where space is limited. Its low ESR and temperature stability make it highly reliable, and its ability to store and release energy quickly makes it ideal for any kind of application.

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