Allicdata Part #: | 2A03GHB0G-ND |
Manufacturer Part#: |
2A03GHB0G |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 2A DO204AC |
More Detail: | Diode Standard 200V 2A Through Hole DO-204AC (DO-1... |
DataSheet: | 2A03GHB0G Datasheet/PDF |
Quantity: | 1000 |
14000 +: | $ 0.02812 |
Series: | Automotive, AEC-Q101 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 2A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-15, Axial |
Supplier Device Package: | DO-204AC (DO-15) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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2A03GHB0G diodes, also known as single rectifiers, are semiconductor devices that conduct electric current in one direction while blocking current in the opposite direction. They are commonly used in DC power supplies, and also have applications in rectification, voltage-clamping and wave-shaping circuits.
The single rectifier consists of a p-type semiconductor layer sandwiched between two n-type sections on the same surface, with a barrier in the middle. When a large enough voltage (usually several volts in the case of 2A03GHB0G diodes) is applied across the p-n junction, the barrier breaks down and current is allowed to flow from the p-region to the n-region. The voltage required for this breakdown is called the breakdown voltage or avalanche voltage, and this characteristic defines the 2A03GHB0G device as either a fast-reverse (FRED or FREDC) or slow-reverse (SRED or SREDC) diode.
Diodes typically have on-state forward voltages of 0.7 volts or less for small to medium sized signals, and typically about 1.2 volts for larger signals. This makes them highly efficient and suitable for use in a wide range of DC power supply applications. For example, they can be used in DC-to-DC converters, voltage regulators, power inverters, and a variety of other circuits.
Another common application of 2A03GHB0G diodes is in wave-shaping circuits, where they can be used to shape electrical signals into various waveforms. This is done by using the device to selectively pass or block the input signal, depending on the direction of the current flow. This allows the device to convert AC signals into DC signals or vice versa, or to simply shape a wave form into a desired shape.
In addition to being used in DC power supplies and wave-shaping circuits, 2A03GHB0G diodes can be used in other applications including polarity protection, surge protection, and isolation. They can also be used in RF amplifiers and mixers, as noise filters, and in various other applications.
The working principle of a 2A03GHB0G diode is fairly simple and straightforward. When a voltage is applied to the p-n junction, electrons in the n-region near the junction are attracted across the barrier and the voltage increases, resulting in a rapid breakdown of the barrier and allowing current to flow from the p-region to the n-region. The device then acts as a one-way valve, allowing current to flow in only one direction. When the voltage is reversed, the diode is effectively back-biased and no current flows.
2A03GHB0G diodes are a type of semiconductor device that has many applications due to their ability to provide efficient and reliable current in a single direction. They are commonly used in DC power supplies and wave-shaping circuits, as well as other applications including surge protection, RF amplifiers, and noise filtering. The working principle of the diode is simple; when a voltage is applied, electrons are forced across the p-n junction, resulting in a rapid breakdown of the barrier and allowing current to flow in one direction only.
The specific data is subject to PDF, and the above content is for reference
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