Allicdata Part #: | 2A8-ND |
Manufacturer Part#: |
2A8 |
Price: | $ 80.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 5.3W 300MA 55EU2 |
More Detail: | RF Transistor NPN 21V 300mA 2GHz 5.3W Chassis Moun... |
DataSheet: | 2A8 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 72.75240 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 21V |
Frequency - Transition: | 2GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 7dB ~ 9dB |
Power - Max: | 5.3W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 100mA, 5V |
Current - Collector (Ic) (Max): | 300mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55EU |
Supplier Device Package: | 55EU |
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2A8 is a type of RF (radio frequency) bipolar junction transistor (BJT), frequently used in radio-, television-, and other communication-based applications. Its main advantages are being able to switch large power levels while providing high impedance, meaning the circuit requires fewer components and thus consumes less energy. Another advantage of the 2A8 is its ability to rapidly switch RF signals by relying on the self-biasing properties of the BJT. All this makes it an ideal choice for applications that require efficient devices that can make fast and reliable switching decisions.
The 2A8 is also characterized by its low noise, which is important in RF applications. It also offers much better matching than its non-RF counterparts. As with most BJT transistors, the 2A8 contains three regions of operation: Cutoff, Active, and Saturation. A circuit with a 2A8 transistor in the active region will act as a current amplifier to amplify a range of incoming signals. In its cutoff region, the transistor does not allow current to flow between its two electrodes, resulting in a wide-open switch for efficient signal control. In saturation, the device operates as a switch, allowing large currents to flow from one electrode to the other.
In terms of its power capacity, the 2A8 has some impressive specifications. Across its collector-emitter voltage range (Vce) of 15 to 30 volts and base-emitter junction voltage (Vbe) of 1.2 to 1.5 volts, the BJT can handle up to 10 watts in the continuous mode or 20 watts in the pulse mode. Additionally, the 2A8’s low input capacitance makes it well-suited for applications that require fast responses. For all these reasons, the 2A8 is a preferred choice when building RF-connected systems.
The 2A8 has also become popular among hobbyists, as it is relatively easy to use and very inexpensive. With some basic knowledge of its operation, even novices can assemble simple electronics with the 2A8. Its medium power capability and broad frequency range mean that it can be used in a wide range of portable and low-voltage systems, from two-way radios to receivers chasing after weak signals from distant satellites.
The 2A8 is not suitable for use in higher power applications due to its limited thermal dissipation. In higher power applications, excess heat created by the transistor can damage components in the circuit and cause long-term problems. Generally, applications that require higher power levels should use transistors with higher current ratings, such as the 2N2222 transistor.
In conclusion, the 2A8 is an efficient, low-power RF bipolar junction transistor suitable for a variety of portable, low-voltage projects. Its main advantages include low input capacitance, good matching, high impedance, and a wide frequency range. With its many advantages, the 2A8 remains one of the most popular RF bipolar junction transistors available on the market today.
The specific data is subject to PDF, and the above content is for reference
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