2DA2018-7 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2DA2018-7 is a type of bipolar (bipolar junction transistor; BJT) single transistor. It belongs to a class of transistors called field effect transistors (FETs). They are widely used in electronic circuitry due to their very low on-resistance and good linearity in applications such as voltage amplifiers, current regulators, switches, oscillators and other circuits requiring precise control of electricity or amplifying signals.

The 2DA2018-7 is a N-Channel enhancement type FET and is used in many medium-power applications. It has the unique feature of being able to handle high current, up to 30A with a 30V drain-source voltage, making it an ideal choice for high performance, general-purpose applications such as power switching and rectification.

The 2DA2018-7 consists of three basic elements - a source, a drain, and a gate. These elements allow the control of current flow between the source and the drain by controlling the voltage applied to the gate. When a voltage is applied to the gate, an electrostatic field forms between it and the source, allowing the current to flow. When the voltage is removed, the electrostatic field disappears, and the current flow stops. This process is known as the drain-gate transistor characteristic.

The working principle behind the 2DA2018-7 is to use electrostatic fields to control the flow of current through the transistor. The voltage applied to the gate affects the current flowing from the source to the drain. If the gate voltage is high, then the current increases; if the gate voltage is low, then the current decreases. By controlling the gate voltage, the 2DA2018-7 can be used to regulate, amplify, or switch electrical signals.

The 2DA2018-7 is widely used in many applications due to its high linearity, low switching noise and low threshold voltage, allowing it to be used in a variety of applications including power management, switching applications, automotive electronics, telecommunications and consumer electronics.

In conclusion, the 2DA2018-7 is a N-Channel enhancement type FET that has excellent linearity, low on-resistance and good switching characteristics, making it an ideal choice for high performance, general-purpose applications. The working principle behind the transistor is to use electrostatic fields to control the flow of current through the transistor, allowing it to be used to regulate, amplify, or switch electrical signals.

The specific data is subject to PDF, and the above content is for reference