2DD2652-7 Discrete Semiconductor Products |
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Allicdata Part #: | 2DD2652DITR-ND |
Manufacturer Part#: |
2DD2652-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 12V 1.5A SOT-323 |
More Detail: | Bipolar (BJT) Transistor NPN 12V 1.5A 260MHz 300mW... |
DataSheet: | 2DD2652-7 Datasheet/PDF |
Quantity: | 9000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 25mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 270 @ 200mA, 2V |
Power - Max: | 300mW |
Frequency - Transition: | 260MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | 2DD2652 |
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The 2DD2652-7 is an NPN-type bipolar junction transistor (BJT). It can be used in a variety of applications, from basic switching to current amplification, as well as phase control operations, among others. The working principle of a BJT is based on the physical principle of electron tunneling. As current flows through the base of the transistor, electrons in the base region move from the base to the emitter, creating a positive charge in the collector. As a result, a current can be amplified, due to the increased current flow between the emitter and the collector.
A BJT is composed of three regions: emitter, base, and collector. When a voltage is applied to the base and the negative voltage to the emitter, it creates a potential difference across the three regions. This causes a current to flow between the emitter and the collector, an effect called electron injection or tunneling. As this current flow increases, the amount of current flowing between the emitter and the collector increases and the potential difference between the emitter and the collector increases.
BJTs can be used for a variety of applications. They are most commonly used for switching, as the current flow in the BJT can be easily and rapidly switched. BJTs are also used for phase control applications, such as light dimmers, as well as current and voltage regulation. Therefore, the 2DD2652-7 can be used in a variety of applications, from basic switching to more complex applications such as phase control and current amplification.
The 2DD2652-7 is also very efficient and reliable. Its low collector-emitter resistance (R_ce), combined with its low voltage drop (V_ce) make it suitable for a variety of power applications. The low noise level and low-cost are also important factors when choosing a BJT. The 2DD2652-7 has been designed to provide low noise levels and low costs, making it a great choice for applications requiring reliable operation at a low-cost.
In summary, the 2DD2652-7 is an NPN bipolar junction transistor (BJT) that can be used in a variety of applications, from basic switching to current amplification and phase control operations. Its efficiency, low noise and low cost make it a great choice for applications requiring reliable operation at a low cost. Therefore, the 2DD2652- 7 is a great choice for anyone looking for a reliable, efficient and low cost BJT.
The specific data is subject to PDF, and the above content is for reference
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