2EZ18D5/TR12 Discrete Semiconductor Products

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A 2EZ18D5/TR12 diode is a single Zener diode rated for 18V. It is commonly used for overvoltage suppression, EMI/RFI suppression, and input/output clamping.

The working principle of the 2EZ18D5/TR12 diode is based on the principle of Zener breakdown. This type of diode is designed with a heavily doped PN junction and a heavily doped cathode. When a voltage higher than the rated voltage is applied to the diode, the PN junction breaks down, allowing current to flow through the diode.

The 2EZ18D5/TR12 diode is typically used in applications where a low voltage is desired but overvoltage protection is required. The diode can be used in any circuit where there is a possibility of overvoltage, such as in the power supply of a computer or the input to a voltage regulator. It is also used as an EMS/RFI suppressor and in general, it can be used to protect sensitive electronic components from overvoltage.

The 2EZ18D5/TR12 diode is also commonly used for input/output clamping. Input/output clamping is a technique used to reduce the amplitude of signals that could potentially damage an electronic device. The diode is designed to conduct current in one direction, so when the voltage at the input is greater than the voltage at the output, the diode will limit current to an acceptable level. This protects the device from damage that could result from overvoltage.

The 2EZ18D5/TR12 diode is also used in EMI/RFI suppression. Electromagnetic interference (EMI) is the random electromagnetic energy that is generated by electrical and electronic appliances, while radiofrequency interference (RFI) is caused by intentionally broadcast signals. The diode is used to absorb or divert these unwanted signals, so that they do not interfere with the operation of the device.

In summary, the 2EZ18D5/TR12 diode is a single Zener diode rated for 18V, typically used for overvoltage suppression, EMI/RFI suppression and input/output clamping. It utilizes the principle of Zener breakdown and is designed with a heavily doped PN junction and cathode, allowing current to flow through it when a voltage higher than the rated voltage is applied. Its applications include power supplies, voltage regulators, and EMI/RFI suppression.

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