2EZ190D10E3/TR12

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2EZ190D10E3/TR12 is a Zener diode, which is of particular type having a heavily doped p-n junction with a reduced reverse breakdown voltage. On forward biasing the diode, it operates similar to a normal diode. When the reverse bias is applied it blocks the current until a certain reverse voltage called as “Zener Voltage” is developed across the junction. The current at this voltage drops drastically and the voltage remains almost constant at a particular temperature and power dissipation level.

The 2EZ190D10E3/TR12 is a single Zener diode device and is a semiconductor component with wide ranging application fields. The component has a variety of characteristics and can be employed in a wide range of areas. It has various property such as high temperature stability, high reliability and very low noise. It is suitable for use in a variety of applications, particularly for applications requiring fast switching. The component is well-suited for use in communication systems, computers, medical electronics, automotive electronics, military electronics and other areas.

The 2EZ190D10E3/TR12 has a working principle of allowing a highly controlled leakage of current back into a circuit when the diode is forward biased. The diode is operated with a reverse voltage above the threshold called as “Zener Voltage” and above it, the current through the diode falls exponentially with increasing voltage. With the help of this functionality, the device can be used in a variety of applications like present regulation, voltage regulation, voltage stabilisation and switching applications.

This device has a wide range of industrial application areas because of its low power dissipation, small size, unidirectional assembly, low cost and long working life. Its application areas include voltage regulation, battery back-up, temperature monitoring, data entry and display, computer peripheral protection, AC-DC fuel cells and spacecraft protection. This diode can also be used for rectifier and inverter circuits and voltage clamping.

In addition, this device is also used in high-frequency applications such as carrier detection circuits, FM modulation and demodulation, high-speed communication and so on. It can also be used in circuits required for frequency clamping, surge suppression and microwave transmission. This diode has found application in a variety of high voltage, high frequency, high temperature, low power and noise environments.

The 2EZ190D10E3/TR12 diode is also suitable for use in low power circuits and very low noise switching applications. It is used as an oscillator and a driver in a multiplexer, as well as in audio amplifier, power regulator and voltage reference circuits. This device can also be used in high power circuits in which the voltage regulation is required with low power dissipation and low noise.

The device has a wide range of features and advantages, including high performance, long life, low power dissipation, temperature stability, high reliability and small size. The device is also widely used for high speed switching and noise clamping. Therefore, the 2EZ190D10E3/TR12 diode is widely used in present regulation, voltage regulation, voltage stabilisation and switching applications, and it can be a very good solution for a variety of applications.

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