2EZ190D2/TR12 Allicdata Electronics
Allicdata Part #:

2EZ190D2/TR12-ND

Manufacturer Part#:

2EZ190D2/TR12

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 190V 2W DO204AL
More Detail: Zener Diode 190V 2W ±2% Through Hole DO-204AL (DO-...
DataSheet: 2EZ190D2/TR12 datasheet2EZ190D2/TR12 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 190V
Tolerance: ±2%
Power - Max: 2W
Impedance (Max) (Zzt): 825 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 144.8V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 2EZ190
Description

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The 2EZ190D2/TR12 is a Zener diode that has a wide range of applications and a unique working principle. It is a common type of single diode, used in a variety of electronic, automotive and consumer applications.

In terms of application fields, one of the most common such uses of the device is in the protection of integrated circuits, using the Zener breakdown effect when in reverse-bias situations. Specifically, the 2EZ190D2/TR12 can be used as a protective element to limit voltage or current in order to protect ICs from potential over-voltage and over-current damage. The device is also often seen in over-current protection, voltage regulation, ripple elimination and transient voltage suppression on automotive vehicles.

In terms of a working principle, the 2EZ190D2/TR12 is known for its Zener breakdown effect. This refers to a decay current that occurs when the diode is subjected to a reverse-bias voltage greater than its Zener voltage. In the case of this device, the operating temperature range is from -65°C to+150°C and its Zener voltage is 5.1V. This zener voltage is a result of the doping inside the diode. Specifically, n-type doping results in an increase of electrons, while p-type doping results in an increase of holes, thus reducing the Zener voltage.

The Zener breakdown effect of the 2EZ190D2/TR12 allows it to provide a relatively quick transition from forward-biased to reverse-biased. This is due to the fact that as the reverse-bias voltage increases exponentially, more and more holes and electrons are drawn from the junction. The breakdown effect in this device maintains a constant, stable current flow and is the basic principle of the voltage regulator. Furthermore, the device is also able to handle fast transition pulses, with temperatures up to 150°C.

The Zener breakdown effect of the 2EZ190D2/TR12 also enables it to be used in applications such as signal isolators and EMC filtering. These applications require fast transition times which the device provides. In signal isolation, it is also important to have fast transition times as well as a constant current source. The 2EZ190D2/TR12 provides both these requirements.

Overall, the 2EZ190D2/TR12 has a wide range of applications and a unique working principle. Its Zener breakdown effect is not only useful for protection, but also for signal isolation, EMC filtering and voltage regulation. Its temperature range of -65°C to+150°C makes it suitable for a number of applications, including automotive use. Furthermore, it has a Zener voltage value of 5.1V, which should not be exceeded for safe operation of the device.

The specific data is subject to PDF, and the above content is for reference

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