2EZ20D2/TR8

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Diodes, especially Zener Diodes, are widely used components that come in many different forms. The 2EZ20D2/TR8 is one such variation of the Zener Diode, which is a single component designed to have reverse breakdown voltage. This particular device is designed to have a low capacitance at high frequencies, making it ideal for applications in RF circuits.

The 2EZ20D2/TR8 is a single component that is capable of operating in both AC and DC environments. It has an on-state voltage drop of 0.25 V and a breakdown voltage of 5 V. This device also has an off-state leakage current of 200 nA, which makes it well suited for applications such as in mobile telephones and other low power applications.

The 2EZ20D2/TR8 features a high temperature capability, which is suitable for use in devices that are operated at high temperatures. This device also has a high switching speed, making it ideal for use in applications that require a fast response.

The main application of the 2EZ20D2/TR8 is in RF circuits, where it is used to protect the other components from potential damage due to over-voltages. The device will stop the current from flowing when the voltage exceeds its breakdown voltage, thereby protecting the other components from damage. It is also used in AC and DC circuits to provide protection from over-voltages as well.

The working principle of the 2EZ20D2/TR8 is based on the reverse breakdown voltage. It is a diode that is designed to have its reverse breakdown voltage at a specified level. When an external voltage that is greater than the breakdown voltage is applied, the current will flow through the device and will create a voltage drop across the built-in Zener barrier. The voltage drop created by the Zener diode will then reduce the voltage across the device, thus providing the protection.

To sum up, the 2EZ20D2/TR8 is an ideal device for applications in RF circuits, where it is used to protect other components from potential over-voltage damage. It features a low capacitance at high frequencies, an on-state voltage drop of 0.25 V, a breakdown voltage of 5 V, and an off state leakage current of 200 nA. Moreover, the device also has a high-temperature capability and a fast switching speed. The working principle is based on the reverse breakdown voltage, wherein an external voltage that is greater than the breakdown voltage will create a voltage drop across the device, providing protection to the other components.

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