2EZ33DE3/TR12 Allicdata Electronics
Allicdata Part #:

2EZ33DE3/TR12-ND

Manufacturer Part#:

2EZ33DE3/TR12

Price: $ 0.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 33V 2W DO204AL
More Detail: Zener Diode 33V 2W ±20% Through Hole DO-204AL (DO-...
DataSheet: 2EZ33DE3/TR12 datasheet2EZ33DE3/TR12 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.45379
Stock 1000Can Ship Immediately
$ 0.5
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±20%
Power - Max: 2W
Impedance (Max) (Zzt): 23 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 25.1V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 2EZ33
Description

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Diodes - Zener - Single: 2EZ33DE3/TR12 application field and working principle

2EZ33DE3/TR12 is a type of single zener diode, often used to provide a constant, stable reference voltage in electronic circuits. It has a low leakage current for a wide range of temperatures, making it ideal for use in switching power supplies and low-voltage DC circuits. It is also a powerful, versatile component due to its ability to handle high power levels, its high reverse voltage, and its short circuit current rating.

The 2EZ33DE3/TR12 single zener diode is composed of a p-type semiconductor substrate (anode) and an n-type semiconductor substrate (cathode) placed on top of it. The p-type substrate has a layer of n-type doped material, which provides a reverse breakdown voltage. On the n-type substrate, a layer of p-type doped material provides an avalanche effect. When a voltage is applied across the diode, the reverse breakdown voltage is exceeded and the avalanche effect is initiated and this creates a large number of electron-hole-pairs within the semiconductor material, resulting in a current flow from the anode to the cathode.

When a voltage is closely below the zener breakdown voltage the diode behaves as a regular diode. The current flows from the anode to the cathode up to a specific level of voltage. After exceeding the zener breakdown voltage, the current does not increase, regardless of how much higher the voltage is. This keeps the voltage relatively stable even when high power levels are used.

The 2EZ33DE3/TR12 is often used in voltage regulators, voltage limiting applications, protection circuits, and various types of LED circuits. It can also be used in zero-current switching circuits and other pulse width modulation applications. It is also used in power conditioning circuits to reduce peak currents and in level shifting circuits.

The 2EZ33DE3/TR12 offers many benefits compared to other types of single zener diodes. It has a low leakage current, which extends its lifetime and reduces power loss. Its low capacitance reduces power noise, and its high-frequency operation capabilities allow it to handle higher frequencies without having to worry about signal integrity. Its high reverse voltage and current capacity also make it very versatile.

In conclusion, the 2EZ33DE3/TR12 is a reliable and versatile single zener diode that provides a consistent and stable reference voltage. Its low leakage current and high reverse voltage capabilities make it ideal for use in a wide range of applications, from voltage regulators to power conditioning circuits and level shifting. Its high-frequency operation capability also makes it ideal for use in digital circuits.

The specific data is subject to PDF, and the above content is for reference

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