2EZ4.7D10E3/TR8 Allicdata Electronics
Allicdata Part #:

2EZ4.7D10E3/TR8-ND

Manufacturer Part#:

2EZ4.7D10E3/TR8

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 4.7V 2W DO204AL
More Detail: Zener Diode 4.7V 2W ±10% Through Hole DO-204AL (DO...
DataSheet: 2EZ4.7D10E3/TR8 datasheet2EZ4.7D10E3/TR8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±10%
Power - Max: 2W
Impedance (Max) (Zzt): 4.5 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 2EZ4V7
Description

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Diodes - Zener - Single

2EZ4.7D10E3/TR8 is a single zener diode made from gallium arsenide phosphide (GaAsP), which is a semiconductor material with the ability to regulate voltage. It is typically used for voltage stabilization, peak rectification, and reverse surge applications in electronic circuits. This diode is a unidirectional device that is capable of conducting current in only one direction - from anode to cathode - regardless of the voltage polarity. The 2EZ4.7D10E3/TR8 diode is designed to operate over a wide range of temperatures and power levels.

Application Field

2EZ4.7D10E3/TR8 diodes are commonly used in applications that require control of low to moderate voltages. These include voltage regulators, DC-DC converters, battery chargers, and motor controllers. It is also used for various communications applications including optical isolators, ESD protection, data transmission circuits, and switching power supplies. Additionally, this diode is well-suited for applications that require high-reliability, electrostatic discharge protection, and high-temperature operation.

Working Principle

A 2EZ4.7D10E3/TR8 diode works on the principle of zener breakdown. When a forward voltage is applied to the diode, electrons in the semiconductor material begin to move from the N-side to the P-side. This flow of electrons creates a large current, which increases as the voltage increases until it reaches the breakdown voltage, or Zener voltage, of the diode. At this point, the diode conducts current in both directions, resulting in a reversible flow of current, or a low-impedance path. This allows the diode to regulate voltage across the device, providing voltage stabilization and peak rectification.

Performance Characteristics

The 2EZ4.7D10E3/TR8 diode is designed to have a wide range of performance characteristics. It has a very low thermal resistance and is capable of operating at high temperatures up to 175°C for extended periods of time. It also has a high reverse surge current ratings, allowing it to handle higher voltage spikes without damage. Additionally, this diode has a wide operating range and is capable of handling a wide range of voltages from 5V to 1000V. It also features a low forward voltage drop, allowing for efficient operation of the circuit.

Conclusion

The 2EZ4.7D10E3/TR8 diode is a single zener diode made from GaAsP, which provides very efficient voltage regulation, peak rectification, and surge protection. It is designed to handle a wide range of temperatures, voltage levels, and powers, making it well-suited for many different applications. This diode is capable of handling high reverse surge currents and has excellent performance characteristics. It is also designed to operate on the principle of zener breakdown, providing the necessary protection for circuits that require voltage stabilization and peak rectification.

The specific data is subject to PDF, and the above content is for reference

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