2EZ8.2D/TR8

2EZ8.2D/TR8 Application Field and Working Principle

The 2EZ8.2D/TR8 is a single Zener diode that functions as an electronic component designed for electrical current regulation. The diode is specifically designed to function at very low voltages and currents—as low as 2 volts at 500 nanoseconds pulsewidths.

Characteristics

• Max. reverse current: 200 μA
• Max. power dissipation: 200mW
• Recommended pre-conditioning current: 30 mA

Application Fields for 2EZ8.2D/TR8

The 2EZ8.2D/TR8 is particularly well-suited for applications that need both current regulation and fast response times. This type of diode is ideal for use in high-speed logic applications that require extremely low input current and fast response times, such as memory chips and frequency counters. Additionally, this type of diode can be used in applications such as voltage regulation and power management.

Working Principle

The working principle of the 2EZ8.2D/TR8 is based on the reverse-bias avalanche effect. A reverse bias is applied to the diode, which causes an avalanche breakdown in the N-type semiconductor material. The breakdown occurs when the P-N junction voltage reaches a certain level and a large electric current flows through the diode. As a result, the diode prevents further increases in the voltage and current levels. The advantage of this type of diode is that it can be used for applications requiring very low voltages, high speed, or both.

Conclusion

The 2EZ8.2D/TR8 is a single Zener diode designed for applications requiring both current regulation and fast response times. Its low voltage and current characteristics make it ideal for use in high-speed logic applications such as memory chips and frequency counters. The 2EZ8.2D/TR8 also has applications in voltage regulation and power management because of its ability to prevent further increases in the voltage and current levels. The diode relies on the reverse-bias avalanche effect to control and regulate current and voltage levels.