Allicdata Part #: | 2M160ZHR0G-ND |
Manufacturer Part#: |
2M160ZHR0G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 160V 2W DO204AC |
More Detail: | Zener Diode 160V 2W ±5% Through Hole DO-204AC (DO-... |
DataSheet: | 2M160ZHR0G Datasheet/PDF |
Quantity: | 1000 |
7000 +: | $ 0.06818 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 160V |
Tolerance: | ±5% |
Power - Max: | 2W |
Impedance (Max) (Zzt): | 650 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 121.6V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-15, Axial |
Supplier Device Package: | DO-204AC (DO-15) |
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The 2M160ZHR0G is a single Zener diode that offers silicon protectors for overvoltage protection applications. It is designed to limit its reverse current at predetermined peak voltages and operate in the avalanche mode. This diode offers the highest peak non-clamping voltage, combined with low voltage drops and superior clamping capabilities.
The main feature of the 2M160ZHR0G Zener diode is its ability to limit the reverse voltage at predetermined peak voltages. When such an electric field is applied across the diode junction, the electric field strength at the junction is increased. As a result, thermally generated carriers, electrons and holes, start to be thermally generated by the process of impact ionization. These thermally generated carriers form a current in the opposite direction of the applied field, which is referred to as the Zener current. Through this process, the voltage across the diode junction will be limited at its breakdown value, which can usually be identified by the diode\'s Zener voltage.
The 2M160ZHR0G Zener diode can be used in a range of applications, including digital power supplies, low power circuits and as protection from overvoltage surges. Its peak non-clamping voltage makes it an ideal choice for overvoltage protection. Furthermore, its low voltage drops and superior clamping capabilities make it suitable for use in a variety of digital power supplies.
The working principle of 2M160ZHR0G Zener diode can be explained in two steps. First, the Zener diode allows a current to flow in the reverse direction. This current flows when the voltage across it is greater than its breakdown voltage, also known as its Zener voltage. The applying voltage is reduced to the reverse voltage of the diode. Secondly, when the reversed current is increased, the avalanche effect occurs. The avalanche effect is the result of a phenomenon known as the impact ionization, which occurs when a high electric field is present near a junction. This phenomenon produces thermally excited carriers, which form the avalanche current, thereby limiting the reverse voltage at its breakdown voltage.
In summary, the 2M160ZHR0G is a single Zener diode that offers silicon protectors for overvoltage protection applications. This diode offers the highest peak non-clamping voltage, combined with low voltage drops and superior clamping capabilities. The Zener diode allows a current to flow in the reverse direction when the voltage across it is greater than its breakdown voltage. When the reverse current is increased, the avalanche effect occurs and the voltage across the diode junction will be limited at its breakdown voltage. This diode can be used in a range of applications, including digital power supplies, low power circuits and as protection from overvoltage surges.
The specific data is subject to PDF, and the above content is for reference
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