2N1016C Allicdata Electronics
Allicdata Part #:

2N1016C-ND

Manufacturer Part#:

2N1016C

Price: $ 0.69
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: NPN TRANSISTOR
More Detail: Bipolar (BJT) Transistor
DataSheet: 2N1016C datasheet2N1016C Datasheet/PDF
Quantity: 1000
100 +: $ 0.63000
Stock 1000Can Ship Immediately
$ 0.69
Specifications
Series: *
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N1016C is a single bipolar junction transistor (BJT) that can provide significant advantages in multiple applications. It is a low-frequency, low-noise NPN transistor designed for switching, amplifier, and general-purpose applications. BJTs are favorite devices among engineers because they are simple to use, easy to understand, and inexpensive to build. The 2N1016C is a general-purpose, low-frequency BJT most often used as an amplifier. It is typically used in switching applications, and can also be used as an oscillator or radio-frequency (RF) signal generator.

The 2N1016C BJT is a three-terminal device with an emitter, base, and collector that allow current to flow from the emitter to the collector. It operates by injecting charge carriers (electrons and holes) into the base-collector junction. The base is used to control the number and type of charges injected into the base-collector junction and manipulate the current flow. The collector terminal is the output for the current flow, and the emitter is where the current enters.

The 2N1016C provides significantly better performance than standard BJTs, making it ideal for all types of applications. It can be used to create low-noise amplifiers, oscillators, and switching circuits. Its higher gain and current ratings allow it to operate with more efficiency and greater accuracy than standard BJTs. The 2N1016C also offers better power dissipation, making it more suitable for high-power applications. Additionally, the 2N1016C has an enhanced breakdown voltage compared to standard BJTs, allowing it to operate at higher voltages.

The 2N1016C can also be used to generate RF signals. The transistor\'s base, collector, and emitter can be configured in a variety of topologies to generate specific frequencies, depending on the desired application. The 2N1016C also offers superior switching characteristics compared to standard BJTs, making it more suitable for use in digital circuits. Its superior switching characteristics enable fast switching speeds, improved transient response, and higher noise immunity.

Ultimately, the 2N1016C offers a great combination of performance and cost-effectiveness. It is a robust device that offers great performance in a variety of applications. The 2N1016C is a great choice for power-sensitive applications, low-noise applications, switching applications, and applications requiring high breakdown voltages.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "2N10" Included word is 3
Part Number Manufacturer Price Quantity Description
2N1016D Microsemi Co... 0.69 $ 1000 NPN TRANSISTORBipolar (BJ...
2N1016C Microsemi Co... 0.69 $ 1000 NPN TRANSISTORBipolar (BJ...
2N1016B Microsemi Co... 0.69 $ 1000 NPN TRANSISTORBipolar (BJ...
Latest Products
BC807-16W/MIX

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

BC807-16W/MIX Allicdata Electronics
CP547-MJ11015-CT

TRANS PNP DARL 30A 120V DIEBipolar (BJT)...

CP547-MJ11015-CT Allicdata Electronics
CP547-CEN1103-WS

TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...

CP547-CEN1103-WS Allicdata Electronics
TIP35C SL

TRANS GENERAL PURPOSE TO-218Bipolar (BJT...

TIP35C SL Allicdata Electronics
JAN2N3634

TRANS PNP 140V 1ABipolar (BJT) Transisto...

JAN2N3634 Allicdata Electronics
BULB7216-1

TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...

BULB7216-1 Allicdata Electronics