Allicdata Part #: | 2N1480-ND |
Manufacturer Part#: |
2N1480 |
Price: | $ 2.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS NPN 55V 1.5A TO-39 |
More Detail: | Bipolar (BJT) Transistor NPN 55V 1.5A 1.5MHz 5W Th... |
DataSheet: | 2N1480 Datasheet/PDF |
Quantity: | 456 |
1 +: | $ 2.70270 |
10 +: | $ 2.41479 |
25 +: | $ 2.17300 |
100 +: | $ 1.97990 |
250 +: | $ 1.78671 |
500 +: | $ 1.60321 |
1000 +: | $ 1.35211 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 55V |
Vce Saturation (Max) @ Ib, Ic: | 1.4V @ 20mA, 200mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 200mA, 4V |
Power - Max: | 5W |
Frequency - Transition: | 1.5MHz |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 |
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The 2N1480 is a medium power NPN silicon transistor. It is intended for use in low-level amplification and switching circuits, and can be used in a wide range of applications. It features an extended operating temperature range and an enhanced package for improved performance and robustness in hostile environments.
The 2N1480 is a NPN-type bipolar junction transistor (BJT) specifically designed to operate over a broad voltage range, making it suitable for both low-level amplification and high-voltage switching applications. It is normally used in common emitter and common collector configurations, and has a maximum collector to emitter voltage (Vce) rating of 250 V, a maximum collector current (Ic) rating of 1.0 A, and a minimum gain (hfe) of 80 at a collector current of 10 mA. The device also features a relatively low saturation voltage (Vce sat) of 0.3 V.
The 2N1480 has two stable operating regions. In the active region, current flows between the base and collector, and the transistor is said to be “on”. In the reverse-active region, current flows from the collector to the base, and the transistor is said to be “off”. In the on state, the gain is determined by the ratio of the base current to the collector current. In the off state, the transistor acts as an open switch, with no current flowing through it.
In terms of application fields, the 2N1480 can be used in low-level amplification and switching circuits. It can be used in audio and video amplifiers, radio receivers and transmitters, deflection circuits, and power supplies, among many other applications. Its wide voltage rating and low saturation voltage make it ideal for these applications. In addition, the device\'s extended operating temperature range and enhanced package make it suitable for use in hostile environments.
In conclusion, the 2N1480 transistor is a NPN-type bipolar junction transistor suitable for use in low-level amplification and switching circuits. It is designed to operate over a broad voltage range, making it suitable for both low-level amplification and high-voltage switching applications. The device\'s extended operating temperature range and enhanced package make it suitable for use in hostile environments. As such, it is a versatile and reliable device that can be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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