2N2720 Allicdata Electronics
Allicdata Part #:

2N2720-ND

Manufacturer Part#:

2N2720

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN DUAL TO78
More Detail: Bipolar (BJT) Transistor Array Through Hole T...
DataSheet: 2N2720 datasheet2N2720 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: --
Current - Collector (Ic) (Max): --
Voltage - Collector Emitter Breakdown (Max): --
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Power - Max: --
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
Description

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Transistors - Bipolar (BJT) - Arrays

This article takes the 2N2720 transistor array as an example to discuss its application fields and working principles, so as to help the readers to understand better about the subject.

Application fields of 2N2720

The 2N2720 transistor array was introduced by the American high-frequency components manufacturer, Signal Technology Corporation. This transistor array is usually employed in television sets, computers, and audio devices. For example, it can be used together with the mixer circuits of the television sets to achieve improved IIP3 (third order input intercept point) linearity. In addition, the 2N2720 transistor array is also widely used in a wide range of switching applications, such as engaging and disengaging relays, and driving motors.

Working Principle of 2N2720

2N2720 is a bilateral device consisting of an N-type semiconductor and two P-type semiconductors. Each pair of semiconductors is surrounded by an insulating material to prevent current leakage between the N and P regions. When the emitter-base terminal is forward biased and given a suitable external signal source input, current can flow from the emitter-base junction to the collector-base junction through the N-type semiconductor. At the same time, the electrons injected from the N-type semiconductor can also result in current flowing from the collector-base junction to the emitter-base junction. As a result, the current gain of the device can be effectively increased. This is the working principle of the 2N2720 transistor array.

Conclusion

To sum up, the 2N2720 transistor array is a device widely used in a variety of applications. Its working principle is relatively simple but effective, and can achieve improved linearity, and increased current gain. We hope this article has helped to clarify the application fields and working principle of the 2N2720 transistor array.

The specific data is subject to PDF, and the above content is for reference

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