2N4209 Discrete Semiconductor Products

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The 2N4209 is a member of the 2N4200 family of silicon epitaxial-base NPN transistors known for their very high current- and power-handling capabilities. The device is designed to be used in power amplifiers, power oscillators and other similar high-current circuits. It has a wide range of applications, including motor control, power supply switching, power amplification and drive circuits.

The 2N4209 is a three-terminal device, consisting of two internally connected terminals, the base and the emitter, and a third externally connected terminal, the collector. The base-emitter junction has a forward voltage drop of 0.6 to 0.7 volts. The device has a current gain ranging from 25 to 60, which is a characteristic of its construction.

The 2N4209 operates on the principle of minority carrier injection, which means that current flow in the device is controlled by the collector current. This is because the amount of electrons and holes injected from the base into the collector is reduced as the collector current increases. This has the effect of reducing the amplification of the transistor and limiting the maximum current that can be drawn from it.

The 2N4209 also has a high power dissipation capability due to its large power-handling capabilities. As a consequence, the device can be used to drive large loads such as motors, power supplies and other applications. The high power dissipation capability makes the device suitable for high-frequency, high-power applications.

The 2N4209 has a high breakdown voltage of 140 volts and can handle voltage up to 200 volts. It has a maximum collector current of 3 amperes and a maximum power dissipation of 75 watts. The device can dissipate up to 5.0 watts of power at a collector current of 1.0 amps and up to 15 watts of power at a collector current of 3.0 amps.

In terms of characteristics, the 2N4209 has a typical gain bandwidth product of five MHz. This characteristic is important for applications that require high switching speeds and high-frequency operation. The device also has a low collector-emitter saturation voltage of 0.2 volts, which makes it ideal for low-voltage switching applications.

Overall, the 2N4209 has a wide range of applications due to its high current- and power-handling capabilities. It is widely used in power amplifiers, power oscillators, motor control, power supply switching and drive circuits. The device is suitable for high-frequency, high-power applications and its low collector-emitter saturation voltage makes it ideal for low-voltage switching applications.

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