2PS12017E34W32132NOSA1 Discrete Semiconductor Products |
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Allicdata Part #: | 2PS12017E34W32132NOSA1-ND |
Manufacturer Part#: |
2PS12017E34W32132NOSA1 |
Price: | $ 2.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT STACK A-PS4-1 |
More Detail: | IGBT Module Three Phase Inverter Chassis Mount... |
DataSheet: | 2PS12017E34W32132NOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 2.52000 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Three Phase Inverter |
Vce(on) (Max) @ Vge, Ic: | -- |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -25°C ~ 55°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBT Modules are widely used in microelectronic components and various electronic device application systems. The 2PS12017E34W32132NOSA1 is a two pole 17 Amp IGBT module based on medium voltage technology and has low gate charge, low EMI propagation, low conduction and switching losses. It is particularly suitable for applications in automotive electronics, automation and domestic appliances.
The working principle of an IGBT module is based on the principle of three junction unipolar transistor, i.e. one n-type and two p-type regions. The p-type regions are isolated from each other by a n-type region. This structure gives the module a higher voltage rating and lower saturation voltage.
When a positive gate voltage is applied across the gate and emitter of the transistor, a current flows from the gate to the emitter. This current allows for better control of the current flow through the transistor. This provides for more efficient switching, faster switching speeds and better temperature management.
When the module is switched off, the electrons of the gate current holding the transistor in the “on” state flow away and the transistor switches off. This switching takes place quickly and reliably. The module also has a high temperature operation range, up to 175°C. This makes it suitable for many harsh applications.
The 2PS12017E34W32132NOSA1 IGBT module has a high power handling capability and high peak current rating. It is also equipped with an integral temperature control system that provides for fast temperature ramp up and shut down. This allows for faster and more reliable operation of the module.
Because of its low losses due to switching and conduction and the high current handling capability, the 2PS12017E34W32132NOSA1 IGBT module is ideal for applications in automotive electronics, industrial automation, power conversion and home appliances. It is also suitable for applications such as welding, DC motor drive, battery charge and discharge, UPS (uninterruptible power systems) and solar inverters.
The 2PS12017E34W32132NOSA1 IGBT module is a highly efficient and reliable medium voltage module. It is suitable for a variety of high power applications and offers a reliable and cost-effective way to improve power efficiency.
The specific data is subject to PDF, and the above content is for reference
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