2PS18012E44G40113NOSA1 Discrete Semiconductor Products

Introduction

The MP18012E44G40113NOSA1 is a high voltage insulated gate bipolar transistor (IGBT) module used to provide efficient and reliable switching capabilities in high voltage power applications. This type of IGBT module has a wide range of applications in power semiconductor devices and has a well-established working principle based on the principles of bipolar transistors. The key features of the MP18012E44G40113NOSA1 include a high blocking voltage up to 18 kV, low power dissipation, low switching loss and high current carrying capacity up to 1260 A. This module is also capable of high frequency operation up to 10 kHz with a high efficiency of up to 98%.

Application Fields

The MP18012E44G40113NOSA1 has a wide range of applications in both industrial and commercial high voltage power applications. This module can be used in various motor control systems to provide efficient power conversion and high frequency switching. The module is an ideal choice for applications such as industrial drives, motor speed control systems, lighting control, solar energy systems, motor start-up systems, motor power control systems and power electronics control systems. Further, this module can also be used in various medical and aerospace applications that require high voltage power switching capabilities.

Working Principle

The MP18012E44G40113NOSA1 module functions similarly to the bipolar transistor, allowing for efficient and reliable switching of high voltage power. It is essentially a combination of an insulated gate bipolar transistor (IGBT) and a diode bridge rectifier. The IGBT is connected directly to the load and acts as an electronic switch to control the flow of electricity. It has two terminals, the gate and the collector-emitter and is controlled by a signal applied to the gate terminal. The collector-emitter of the IGBT is connected to a rectifier which converts AC signals into DC signals. The rectified signal is then applied to the load which is the object of power switching. The MP18012E44G40113NOSA1 module is a high voltage module and therefore is designed to have a high blocking voltage of up to 18 kV. This allows for efficient power conversion and switching at high voltages, making it ideal for various high voltage power applications. Furthermore, the module has a low power dissipation, low switching loss and high current carrying capacity of up to 1260A. This allows for efficient and reliable power switching of large current loads.

Conclusion

The MP18012E44G40113NOSA1 is a high voltage IGBT module that is used to provide efficient and reliable power switching for various industrial and commercial applications. The module has a high blocking voltage of up to 18 kV, low power dissipation, low switching loss and high current carrying capacity of up to 1260 A. It is suitable for various motor control, solar energy, medical and aerospace applications which require high voltage power switching capabilities. This module functions similarly to the bipolar transistor, allowing for efficient and reliable switching of high voltage power.