2SB906-Y(TE16L1,NQ Allicdata Electronics
Allicdata Part #:

2SB906-Y(TE16L1NQTR-ND

Manufacturer Part#:

2SB906-Y(TE16L1,NQ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 60V 3A PW-MOLD
More Detail: Bipolar (BJT) Transistor PNP 60V 3A 9MHz 1W Surfac...
DataSheet: 2SB906-Y(TE16L1,NQ datasheet2SB906-Y(TE16L1,NQ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 9MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD
Description

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The 2SB906-Y (TE16L1, NQ) is a high voltage fast switching transistor made from high voltage NPN silicon. It has two terminals; the emitter and the collector. The emitter serves as the source of the electrons that flow when current is flowing through the base-collector junction. The collector serves as the sink of electrons that flow when current is flowing through the base-emitter junction. When the transistor is directly connected to a current source it will switch off (turn off) when the current is below a certain threshold, and on (turn on) when the current is above the threshold. The transistor can also be used as an amplifier, with the current in the base-emitter junction controlling the current through the collector-emitter junction. This allows the user to control a relatively high voltage from a relatively low voltage.

The 2SB906-Y (TE16L1, NQ) is suitable for use in a variety of applications, from audio equipment, to voltage controlled oscillators, and even in RF circuits. The major benefit of the transistor is its ability to switch quickly and accurately between on and off states. The transistor has a breakdown voltage of 1100V, which gives it the capability to handle higher voltage applications without damaging the transistor. Furthermore, it is capable of operating at high frequencies, allowing it to be used in many different types of RF systems.

The transistor also works extremely well in voltage controlled oscillators, as the current in the base-emitter junction can be easily controlled, allowing precision voltage and frequency control. Furthermore, the transistor is rated for a peak peak current of up to 160 mA, making it suitable for many applications that require high current supplies. With the addition of a suitable heat sink, the transistor can also be used for high current switching applications.

In summary, the 2SB906-Y (TE16L1, NQ) is an excellent choice for high voltage, fast switching and accurate control applications. Due to its high voltage breakdown, it can be used in many different types of systems. Its current rating makes it suitable for high current supplies and switching applications. Finally, its capacitance makes it suitable for many RF applications, and its pin configuration allows it to be used in many voltage controlled oscillators.

The specific data is subject to PDF, and the above content is for reference

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