Allicdata Part #: | 869-1111-2-ND |
Manufacturer Part#: |
2SK771-5-TB-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 20MA 200MW SCP |
More Detail: | JFET N-Channel 20mA 200mW Surface Mount 3-CP |
DataSheet: | 2SK771-5-TB-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 10V |
Current Drain (Id) - Max: | 20mA |
Input Capacitance (Ciss) (Max) @ Vds: | 9pF @ 10V |
Power - Max: | 200mW |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | 3-CP |
Base Part Number: | 2SK771 |
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Transistors - JFETs
The 2SK771-5-TB-E is a conventional junction field effect transistor (JFET). It is an amplifier semiconductor device consisting of three terminals (drain, gate, and source) and a semiconductor channel between the gate and source. There are two types of JFETs, n-channel and p-channel, and they operate identically except in their conductive (or non-conductive) directions which are determined by the material used in the drag and source terminals.
Application Field
JFETs are widely used in many applications including computer circuits, amplifiers, radio receivers, and radio transmitters. They can be used as amplifiers and low-noise switches in audio applications such as in television and Hi-Fi audio systems. They are also used as broadband amplifiers and integrated circuit amplifiers.
Working Principle
The basic principle of operation of a JFET is built on a revised version of the transistor effect based on semiconductors. They are the only kind of transistors that make use of the transistor effect without a separate base electrode, replacing it with a gate. It works similarly to a p-n junction diode but in this case, the voltage applied the gate can be used to control the current that flows through the source-drain terminals. It operates in two modes, namely, the drain-source forward biased mode, and the gate-source reverse biased mode.
In the drain-source forward biased mode, a high drain current can be achieved by applying a low voltage to the gate. In this mode, the transistor will be completely pulled open to ensure a high current flow. In the gate-source reverse biased mode, the transistor is completely closed and it acts as an electronic switch, turning the transistor ‘off’.
JFETs are particularly sensitive to ambient temperatures since the operating point is affected since it is built on the transistor effect. This reduces performance when ambient temperature varies. Also, it is susceptible to mismatches that increase noise levels while reducing linearity and dynamic range. Another disadvantage of JFETs is their high input capacitance that can result in unwanted frequency responses and system instabilities.
Conclusion
2SK771-5-TB-E JFETs are useful semiconductor devices in many applications. They are considerably simple to use compared to other types of transistors and offer superior performance in many cases. However, they have their shortcomings that may limit their effectiveness in some applications. Care must be taken to ensure that the environmental temperatures and electrical mismatches do not degrade their performance in order to get the most out of the device.
The specific data is subject to PDF, and the above content is for reference
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