J2A080GX0/T0BG295, Allicdata Electronics
Allicdata Part #:

J2A080GX0/T0BG295,-ND

Manufacturer Part#:

J2A080GX0/T0BG295,

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANSISTOR JFET 8PLLCC
More Detail: TRANSISTOR JFET 8PLLCC
DataSheet: J2A080GX0/T0BG295, datasheetJ2A080GX0/T0BG295, Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: --
Part Status: Active
FET Type: --
Input Capacitance (Ciss) (Max) @ Vds: --
Operating Temperature: --
Mounting Type: --
Package / Case: --
Supplier Device Package: --
Description

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Transistors - JFETs

A Junction Field-Effect Transistor (JFET) is a three-terminal electronic device that is used to control the flow of electrical current in electronic circuits. The JFET is made up of two p-n junction regions. The first is called gate, while the other is called drain. The Gate is the controlling terminal, while the Drain is the output terminal. In order to control the current flow, the gate must be biased appropriately. The JFET has a low input impedance and a high input current; consequently, it can be used to amplify small signals.

The J2A080GX0/T0BG295 is a JFET with very low input impedance. This device has a very low gate-to-drain capacitance of 1.0 pF and a gate-to-drain resistance of 80 Ω. It is capable of handling up to 2.5 Amperes of power and has an analysis frequency range from DC to 50 GHz.

The J2A080GX0/T0BG295 is used in many applications. Commonly, it is used in high-frequency amplifiers, as well as in low-noise amplifiers. Additionally, it is also used in voltage-controlled amplifiers, signal generators, RF noise detectors, and transceivers. It is also used in switching applications, such as logic circuits, switching power supplies, and other circuit designs.

The J2A080GX0/T0BG295 uses a Field-Effect principle in order to control the current flow. The Gate terminal forms a virtual capacitor with the Drain terminal in order to create an electric field. When the Gate bias is applied, it creates a potential difference between the Gate and the Drain, allowing current to flow from the source to the Drain. This differential is known as the gate-to-drain voltage, and it is controlled by the amount of gate bias applied.

The J2A080GX0/T0BG295 is a very versatile device that can be used in a wide variety of applications. It has a low input impedance, a high input current, and a low input capacitance, making it perfect for applications that require high levels of precision. Furthermore, its wide frequency range allows it to be used in many RF and microwave applications, while its low gate-to-drain capacitance makes it suitable for high-speed switching applications.

The J2A080GX0/T0BG295 is an excellent choice for applications where reliability and precision are paramount. With its low input impedance, high input current, and low input capacitance, it can be used for a variety of purposes, from amplifiers and signal generators to switching applications. Despite its relatively small size, it offers outstanding performance and reliability, making it ideal for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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