2ST5949

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2ST5949 Application Field & Working Principle

The 2ST5949 is a single bipolar junction transistor (BJT) device commonly used in both audio and power applications. This highly versatile device features an integrated NPN construction and a PNP counterpart with complementary electrical characteristics, allowing it to be used in a variety of amplifier and switching circuits. Its relatively low operating voltage, small physical size, superior gain properties and robust construction make it the most popular single BJT device available today.

Features

The 2ST5949 offers a wide range of features for use in both audio and power applications. It features a wide operating voltage range of 0.15 volts to 24 Volts, a very low quiescent current of less than 0.5 mA, excellent gain characteristics of up to 500 milliwatts PEP, an input capacitance of less than 1pF, very low distortion (better than 1%), a collector-to-emitter and an emitter-to-base breakdown voltage of 30 Volts, a low operating temperature range of -65° C to +150° C, and a very high voltage isolation of up to 12 Kilovolts. All these features make the 2ST5949 ideal for use in a variety of integrated circuit (IC) designs.

Application

Due to its superior gain characteristics and wide operating voltage range, the 2ST5949 is ideal for use in a variety of amplifier and power switch applications. It is commonly used in audio amplifier designs, as well as in power switch designs such as H-bridge drivers, battery-based delay circuits, power control circuits and more. It is also an excellent choice for use in high voltage, high current DC-DC converters, high power automotive applications, and other power conversion systems.

Working Principle

The 2ST5949 is composed of an NPN BJT structure. When current is applied to the base of the BJT, current is drawn away from the emitter (the source of the current), allowing charge to be amplified and transferred to the collector. At the collector, the larger current is passed through to the output. This process is known as amplification, and it is the basis of operation for all BJT devices. The 2ST5949 has an integrated PNP structure, allowing it to provide both NPN and PNP amplification.

The 2ST5949 also relies on its integrated physical structure to provide robust voltage isolation. Its integrated structure and efficient packaging improve the transistors’ performance and its ability to withstand up to 12 kilovolts of isolation. This superior isolation prevents unwanted output currents from affecting the operation of the device and allows it to be used in higher voltage and power applications.

The specific data is subject to PDF, and the above content is for reference