2STA1962 Allicdata Electronics
Allicdata Part #:

497-7056-5-ND

Manufacturer Part#:

2STA1962

Price: $ 2.03
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS PNP 230V 15A TO-3P
More Detail: Bipolar (BJT) Transistor PNP 230V 15A 30MHz 150W T...
DataSheet: 2STA1962 datasheet2STA1962 Datasheet/PDF
Quantity: 530
1 +: $ 1.84590
10 +: $ 1.65627
100 +: $ 1.33151
500 +: $ 1.09396
Stock 530Can Ship Immediately
$ 2.03
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 150W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Base Part Number: 2STA1962
Description

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The 2STA1962 is a single-transistor bipolar junction transistor (BJT) with a vast range of potential applications. The device is most commonly used in radio receivers, linear amplifiers and power regulation tasks, but its relatively low power consumption, low noise and small physical size also make it an attractive option for many applications in computers, communication systems and automotive electronics.

The bipolar junction transistor (BJT) is a type of transistor that is based upon two semiconductor junctions. The base region is the first junction, which is separated from the emitter by a thin dielectric layer. The second junction is located between the emitter and the collector. The current flow in a BJT is controlled by the base-emitter voltage (VBE) and the collector-emitter voltage (VCE).

In the 2STA1962, the base terminal is used to control the current through the device, allowing for a wide range of potential applications. For example, a small change in the base voltage will cause a large change in current flowing through the device, allowing for a wide range of linear and digital circuit options. The 2STA1962 is also capable of handling relatively high-currents and voltages, making it an ideal choice for tasks such as power regulation, linear amplification and even radio reception.

The working principle of the 2STA1962 is similar to other BJT components. When a base voltage is applied to the device, the electrons in the emitter region become excited and will flow to the collector. The size of the current flow is dependent on the applied base voltage, which can be used to control the overall voltage and current output of the device. Additionally, the 2STA1962 is a current source component and the device has an internal resistance, which makes it well suited for tasks such as current regulation, signal conditioning and power regulation.

In addition to being suitable for a variety of linear and digital circuit applications, the 2STA1962 is also a very power-efficient component with low thermal dissipation characteristics. The device requires a relatively low voltage to operate and its relatively small size allows it to be used in a wide range of compact electronic devices. Furthermore, the low noise characteristics of this component make it an attractive option for communication systems and other applications that need low-noise performance.

Overall, the 2STA1962 is a versatile component that is capable of handling a wide range of applications. From linear amplifiers, power regulation and signal conditioning, to low-noise communication systems, this component has the flexibility to meet the needs of many applications. Additionally, its power efficiency and small size make it an attractive option for a wide range of electronics projects.

The specific data is subject to PDF, and the above content is for reference

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