2STR2160 Allicdata Electronics
Allicdata Part #:

497-15677-2-ND

Manufacturer Part#:

2STR2160

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS PNP 60V 1A SOT23-3
More Detail: Bipolar (BJT) Transistor PNP 60V 1A 500mW Surface...
DataSheet: 2STR2160 datasheet2STR2160 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 480mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Power - Max: 500mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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Transistors are widely used in many electronic circuits, most notably with the invention of the bipolar junction transistor (BJT). Among them, the 2STR2160 junction transistor is a special type of transistor that is designed to be used in linear, switching, or amplification applications.

The 2STR2160 is a single-type BJT, or a bipolar junction transistor. BJTs are composed of three terminals; the collector, the base, and the emitter. The collector terminal is connected to the power source, where the emitter terminal is the output terminal. The base terminal is the input terminal and serves as the control element when a voltage is applied at this point, it will activate the transistor’s switching or amplifying action.

Being a single BJT, the 2STR2160 transistor is a single-junction PN junction. A single-junction PN diode junction is made up of a semiconductor material such as Silicon that has been doped and then connected together by a means such as a soldering process. As it contains both a P-type and N-type material connected together, the two regions act as a single junction when electricity is applied. In addition, the two regions act as a PN junction in the sense that one type of material will act as a P-type region, and the other type of material will act as an N-type region.

The principle of operation for the 2STR2160 BJT is based on the way electrons and holes recombine in the PN junction. When the current reaches the base terminal, electrons from the N-type region cross the junction and enter the P-type region. Here, they create “holes” in the P-type region. These holes migrate towards the emitter terminal where current then flows into the emitter. The current at the emitter is then amplified, and this increased current is then passed on to the collector terminal.

Due to its efficient operating characteristics, the 2STR2160 is used for a wide range of electrical applications, primarily for analog and digital switching, linear amplification, and power conversion. Its wide conduction angle helps it perform well in applications requiring very brief pulses or bursts of current. Its low current-handling capability and high switching frequency also make it an ideal choice for power supply design applications. Additionally, the 2STR2160 can also be used as a voltage-controlled current source, as it is able to regulate the current output in relation to the input voltage.

In conclusion, the 2STR2160 single BJT is a powerful and versatile transistor that can be used in many different electrical applications. As it is made up of a PN junction, it is able to offer fast switching and efficient amplification while also providing excellent current handling capabilities. This makes it an ideal choice for a wide range of voltage controlled switches, linear amplifiers and power supplies.

The specific data is subject to PDF, and the above content is for reference

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