| Allicdata Part #: | 497-7064-5-ND |
| Manufacturer Part#: |
2STW1695 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | TRANS PNP 140V 10A TO-247 |
| More Detail: | Bipolar (BJT) Transistor PNP 140V 10A 20MHz 100W T... |
| DataSheet: | 2STW1695 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 10A |
| Voltage - Collector Emitter Breakdown (Max): | 140V |
| Vce Saturation (Max) @ Ib, Ic: | 700mV @ 700mA, 7A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 3A, 4V |
| Power - Max: | 100W |
| Frequency - Transition: | 20MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
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The 2STW1695 is a single bipolar junction transistor (BJT) that falls into the category of Transistors. It is designed for applications that require high-voltage operations.
This component is designed specifically for applications that require high-voltage operations, such as switching power supply systems and high-power amplifiers. The 2STW1695 is built using a planar construction process, which reduces the amount of heat generated when this component is in operation.
The maximum collector-emitter voltage rating of the 2STW1695 is V(ces) = 600V and the collector-base rating is V(cbo) = 900V. The collector-emitter saturation voltage is V(ce0) = 1.5V, max at Ic = 10mA, f = 1kHz. The power dissipation of the component is Pc = 3 watts. The component has an insulation resistance of at least 10MΩ at 500V and a junction temperature of 150°C.
The collector current can range from Ic(max) = 2A to Ic(min) = 2mA, and the base current can range from Ib(max) = 200mA to Ib(min) = 2mA. The operating temperature range for this component is –40°C to +150°C. The component can handle peak pulse currents of up to 2A.
The 2STW1695 also has a high-frequency performance rating, with a DC to 400kHz frequency response. At V(ce) = 2V, Ic = 200mA, f = 400kHz, the gain (hFE) is at least 50, and the output capacitance (CO) is less than 4.0pF.
The working principle of the 2STW1695 is the same as any other bipolar junction transistor, which is to "amplify" or switch electrical signals. This component will either block, or pass electrical current depending on the base bias current that is applied to it. The current amplification factor, or hFE of this component is a measure of how much current will be amplified by the component. The higher the hFE, the greater the amplification of current that the component provides.
The 2STW1695 offers superior performance for a variety of applications, thanks to its high-voltage ratings, reliable operation in temperatures from –40°C to +150°C, and its high-frequency performance. This makes it an ideal choice for applications that require reliable operation and heavy switching and power duties.
The specific data is subject to PDF, and the above content is for reference
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2STW1695 Datasheet/PDF