| Allicdata Part #: | 30.769-ND |
| Manufacturer Part#: |
30.769 |
| Price: | $ 3.54 |
| Product Category: | Uncategorized |
| Manufacturer: | Altech Corporation |
| Short Description: | PCB TERM TOP 19P 5MM 15A GRY |
| More Detail: | N/A |
| DataSheet: | 30.769 Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 3.21489 |
| Series: | * |
| Part Status: | Active |
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30.769 Electron Field Emission (EFE) technology is a promising technology for the development of a wide range of devices. Working in the form of an electron source, it has the ability to generate high voltage electron fields, on the order of hundreds of kilovolts. This high voltage enables the production of electrons at substantial intensities, which is important for the production of power in devices such as power amplifiers and laser beams, and for other applications ranging from high frequency radiations for research to advanced particle accelerators.
The basic principle behind EFE is relatively simple. Electron Field Emission (EFE) works by taking advantage of the electric fields produced by the flow of electrons between two surfaces. As electrons move between two surfaces, they create an electrical field, which is capable of producing electrons when high enough voltages are applied. The electrons produced have enough energy to ionize atoms, and each ionized electron is simultaneously accelerated and repelled away from it’s source. In this way, a large number of electrons are generated, and the ions created by these electrons also create their own electric fields, which makes it possible to produce more ions with even higher intensities.
Today, EFE technology is being used in a wide range of applications. For example, it can be used to generate large currents for powering electronic components such as transistors and other integrated circuits. It is also being used to create laser beams for stimulating organic molecules and semiconductor materials for use in photovoltaic (PV) cells. Additionally, EFE is being used to make hollow polymer fibers that can be used in place of traditional fiber optics for telecommunications and computer networks.
In addition to these technological applications, there are several potential medical uses for EFE technology, such as the use of EFE in cancer treatments, using the high voltage electron fields to trigger cancer cells to be damaged and destroyed. This technique has already been proven effective in early clinical studies. Another potential medical application of EFE includes the use of the technology to create nanoscale devices, such as nanotubes, which could be used to deliver drugs to targeted locations in the human body. This technology is still in its early stages but could have profound implications for the treatment of diseases such as cancer, heart disease and Alzheimer’s.
One of the most recent developments in EFE technology is the use of ultra-violet light emitted from negatively charged samples. This process, called gated field emission (GFE), has a number of advantages over traditional EFE, including lower costs, greater accuracy, higher intensities and lower power requirements. GFE has been used to create single-electron transistors, which can be used to control and measure the flow of current between two points. This has already been demonstrated in experiments that monitored semiconductor microchips, proving the potential of GFE technology to revolutionize the science of electronics.
Advances in EFE technology are likely to continue in the years to come. With the development of more efficient electron sources, the application of EFE technology for a wide range of applications will become increasingly widespread. As a result, it is likely that EFE technology will be increasingly used in the development of a host of devices ranging from power amplifiers to nanoscale devices that can be used in medical treatments. With these advancements, it will be exciting to see how far this technology can take us, and what new and innovative applications of EFE technology we may see in the future.
The specific data is subject to PDF, and the above content is for reference
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| ABM8W-30.7200MHZ-4-D2X-T3 | Abracon LLC | 0.23 $ | 1000 | CRYSTAL 30.7200MHZ 4PF SM... |
| ABM8W-30.7200MHZ-6-J1Z-T3 | Abracon LLC | 0.25 $ | 1000 | CRYSTAL 30.7200MHZ 6PF SM... |
| ABM8W-30.7200MHZ-8-D1X-T3 | Abracon LLC | 0.25 $ | 1000 | CRYSTAL 30.7200MHZ 8PF SM... |
| AST3TQ53-V-30.720MHZ-5-SW-T2 | Abracon LLC | 51.74 $ | 1000 | OSC VCTCXO 30.72MHZ CLP S... |
| 30.771 | Altech Corpo... | 3.73 $ | 1000 | PCB TERM TOP 21P 5MM 15A ... |
| ABM10W-30.7200MHZ-6-K2Z-T3 | Abracon LLC | 0.27 $ | 1000 | CRYSTAL 30.7200MHZ 6PF SM... |
| C-2 30.7600K-P | Epson | 0.0 $ | 1000 | CRYSTAL 30.7600KHZ 11PF T... |
| ABM10W-30.7200MHZ-4-D1X-T3 | Abracon LLC | 0.29 $ | 1000 | CRYSTAL 30.7200MHZ 4PF SM... |
| ABDFTCXO-30.720MHZ-L-2-T5 | Abracon LLC | 28.02 $ | 1000 | OSC TCXO 30.7200MHZ LVCMO... |
| VWEUALJANF-30.720000 | Taitien | 1.79 $ | 1000 | OSC VCXO 30.7200MHZ CMOS ... |
| FFSD-13-D-30.72-01-N | Samtec Inc. | 10.84 $ | 1000 | .050 X .050 C.L. FEMALE I... |
| ABM12W-30.7200MHZ-4-J2Z-T3 | Abracon LLC | 0.48 $ | 1000 | CRYSTAL 30.7200MHZ 4PF SM... |
| ABM12W-30.7200MHZ-4-J1Z-T3 | Abracon LLC | 0.5 $ | 1000 | CRYSTAL 30.7200MHZ 4PF SM... |
| VG-4231CA 30.7200M-FGRC | Epson | 1.9 $ | 1000 | OSC XO 30.72MHZ CMOS SMD3... |
| AST3TQ53-T-30.720MHZ-2-SW | Abracon LLC | 22.26 $ | 1000 | OSC TCXO 30.72MHZ CL SNWV... |
| AST3TQ53-T-30.720MHZ-2-SW-T2 | Abracon LLC | 15.27 $ | 1000 | OSC TCXO 30.72MHZ CL SNWV... |
| AST3TQ-V-30.720MHZ-28-T2 | Abracon LLC | 10.16 $ | 1000 | OSC VCTCXO 30.72MHZ LVCMO... |
| ABDFTCXO-30.720MHZ-L-2-T2 | Abracon LLC | 35.46 $ | 1000 | OSC TCXO 30.7200MHZ LVCMO... |
| ABM8W-30.7200MHZ-4-J2Z-T3 | Abracon LLC | 0.26 $ | 1000 | CRYSTAL 30.7200MHZ 4PF SM... |
| ABM10W-30.7200MHZ-7-K2Z-T3 | Abracon LLC | 0.27 $ | 1000 | CRYSTAL 30.7200MHZ 7PF SM... |
| TCSD-05-D-30.70-01-F-N | Samtec Inc. | 6.97 $ | 1000 | 2MM DOUBLE ROW FEMALE IDC... |
| SIT3808AI-D2-33EG-30.720000T | SiTime | 3.79 $ | 1000 | OSC MEMS VCXO 30.7200MHZ ... |
| SIT3907AC-2F-33NE-30.720000T | SiTime | 4.55 $ | 1000 | OSC DCXO 30.7200MHZ LVCMO... |
| ABM10W-30.7200MHZ-8-B2U-T3 | Abracon LLC | 0.27 $ | 1000 | CRYSTAL 30.7200MHZ 8PF SM... |
| 30.768 | Altech Corpo... | 3.35 $ | 1000 | PCB TERM TOP 18P 5MM 15A ... |
| SIT5001AI-8E-33N0-30.720000T | SiTime | 2.4 $ | 1000 | OSC XO 3.3V 30.72MHZ NCTC... |
| ABM8W-30.7200MHZ-6-B1U-T3 | Abracon LLC | 0.25 $ | 1000 | CRYSTAL 30.7200MHZ 6PF SM... |
DIODE GENERAL PURPOSE TO220
CB 6C 6#16 SKT RECP
CA08COME36-3PB-44
CA-BAYONET
CB 6C 6#16S SKT PLUG
CAC 3C 3#16S SKT RECP LINE
30.769 Datasheet/PDF