303CNQ100 Discrete Semiconductor Products

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io) (per Diode):	150A
Voltage - Forward (Vf) (Max) @ If:	910mV @ 150A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	4.5mA @ 100V
Operating Temperature - Junction:	-55°C ~ 175°C
Mounting Type:	Chassis Mount
Package / Case:	PRM4
Supplier Device Package:	PRM4 (Non-Isolated)

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Introduction of Rectifier Arrays

Rectifier Arrays are diodes used for the purpose of directing current in a single direction. This type of device works by transferring energy from the forward bias (anode-to-cathode) to the reverse bias (cathode-to-anode). It is basically a set of several diodes connected together in a way that allows them to share their properties in order to create a single comprehensive unit. Typically, rectifier arrays will contain two or more diodes and can be used in a variety of applications.

Application Field of 303CNQ100 Rectifier Arrays

The 303CNQ100 rectifier array is a 2-in-1 solution and is designed for applications requiring high reverse bias voltage protection and fast recovery from clamping. It is used in applications such as AC/DC converters, DC/DC converters, automated light control systems, motor driver circuits, and more. The 303CNQ100 is ideally suited for high power circuit designs as it features high current capability (I*) and low on-state resistance (Rds(on)). It is also cosmetically tunable and easy to implement.

Working Principle Of 303CNQ100

The 303CNQ100 rectifier array uses a P-type and N-type silicon substrate as its starting material. This material then undergoes a series of steps to fabricate the two or more diodes. First, several layers of N-type and P-type regions are formed in a circular or linear pattern according to the specific design. For example, in the case of the 303CNQ100, the layers consist of N-type, p-type, N-type and p-type regions. The layers are then interconnected using metal plated contacts, and the final product is a complete diode which is mounted on an insulated body. The working principle of the 303CNQ100 is simple. When a voltage is applied to the anode, the diodes will permit current to flow from the anode to the cathode. In this way, the voltage is converted to a lower voltage at the cathode which can then be used for various applications. Additionally, when a negative voltage is applied to the anode, the diodes will block the current and a reverse bias voltage is created at the cathode. This reverse bias voltage serves to protect the circuitry from high voltages and can quickly reduce the clamping voltage applied to the circuit in order to protect the latter from damage.

Conclusion

The 303CNQ100 rectifier array is an advanced solution for applications requiring high current protection and fast recovery clamping. It is an ideal solution for high power circuit designs due to its high current capability and low on-state resistance. Its working principle is simple and it is easy to mount and implement. With its various features and benefits, the 303CNQ100 rectifier array is the ideal device for high power circuit designs.

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