
Allicdata Part #: | 30C02CH-TL-EOSTR-ND |
Manufacturer Part#: |
30C02CH-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.7A CPH3 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 700mA 540MHz 700m... |
DataSheet: | ![]() |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 700mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 190mV @ 10mA, 200mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 50mA, 2V |
Power - Max: | 700mW |
Frequency - Transition: | 540MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-96 |
Supplier Device Package: | 3-CPH |
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30C02CH-TL-E transistors are bipolar junction transistors (BJTs) designed for use in switched power supply (SPS) and DC/DC converter applications. These devices are useful in applications requiring high power or high frequency switching or high current sensing.
The 30C02CH-TL-E is a single transistor with an integrated "low-side" driver. This means that the transistor can be configured to switch on or off the device connected to it at any time. The transistor also comes with a built-in, high side driver, which gives it the ability to drive a second transistor in parallel. This feature provides additional flexibility in the design and operation of a switching power supply circuit.
The integrated driver also provides protection against overcurrent conditions and allows the transistor to be operated in either a high-side or low-side mode. This allows the switches in the power supply to be switched on and off without the need for an external voltage source for each switch. In addition, the driver can be used to control the speed of the power converter and the characteristics of PWM pulses.
The 30C02CH-TL-E features maximum voltages of over 30V and a low on-state resistance. This makes it ideal for efficiently and reliably switching large currents in high-power and high frequency applications. The device is also suitable for high-current current sensing applications and can be used to control the current in a circuit that is subjected to high loads such as motor control and lighting applications.
The 30C02CH-TL-E working principle is based on the principle of reverse biased junction. When the gate is biased, current flow between the emitter and the collector is blocked, causing the voltage across the emitter and collector to rise. As the voltage rises, it causes the current through the resistor to increase. This results in the transistor "turning on" and allowing current to flow from the collector to the emitter. When the gate voltage is lowered, the current flow between the emitter and the collector is reduced, and the transistor is off.
The 30C02CH-TL-E transistors are widely used in power supplies, motor control, and output stage drivers in PWM switching converters and linear converters. The device has a stable breakdown voltage and can withstand high temperatures, making it well suited for extreme applications such as server rooms, data centers, and industrial equipment. It can also be used in high-power automotive applications such as powertrain controllers and lighting systems.
In summary, the 30C02CH-TL-E is a single bipolar junction transistor (BJT) designed for applications requiring high power or high frequency switching or high current sensing. It has a low on-state resistance, an integrated high side driver, and a high breakdown voltage which makes it suitable for applications requiring extreme conditions. The device is also suitable for current sensing applications and can be used to control the current in a circuit subjected to high loads. The working principle of the device is based on the reverse biased junction principle.
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