Allicdata Part #: | 3A60HB0G-ND |
Manufacturer Part#: |
3A60HB0G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 3A DO204AC |
More Detail: | Diode Standard 600V 3A Through Hole DO-204AC (DO-1... |
DataSheet: | 3A60HB0G Datasheet/PDF |
Quantity: | 1000 |
14000 +: | $ 0.04022 |
Series: | Automotive, AEC-Q101 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 27pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-15, Axial |
Supplier Device Package: | DO-204AC (DO-15) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The 3A60HB0G diode is a single package rectifier diode, more commonly referred to as a Schottky diode. This device is mainly used for high-speed rectification of low- and medium-frequency power supplies.
The most notable feature of this device is its low-voltage, low-power, and high-switching speed characteristics. These three factors make it ideal for use in automotive, industrial, and consumer electronics applications. Other characteristics include a reverse voltage rating of 60V, a forward current rating of 3A, a reverse leakage current of 40mA, and a reverse recovery time of less than 100ns.
The working principle behind the 3A60HB0G diode lies in the formation of a Schottky barrier at its junction point. This barrier is formed when an N-type semiconductor material is attached to a P-type semiconductor material with a small gap between the two. When a forward-biasing voltage is applied across the junction, electrons within the N-type material are attracted to the P-type material, while holes in the P-type material are attracted to the N-type material. This creates a migration of carriers within the junction, which results in the formation of a low-voltage rectifying barrier. This barrier is in part responsible for the device\'s efficiency and fast switching characteristics.
One of the main applications for the 3A60HB0G diode is for high-speed rectification of low- and medium-frequency power supplies. Rectification is the process of taking an alternating current (AC) input and converting it into a direct current (DC) output. This is achieved by the use of a semiconductor device such as a diode, which only allows current to flow in one direction. Due to its high-switching speed characteristics, the 3A60HB0G diode is well-suited to high-frequency applications, such as high-speed motor control circuits or data converters. Other potential applications include router power supplies, automotive sensors, and solid-state lighting systems.
In conclusion, the 3A60HB0G diode is an excellent choice for a variety of high-speed rectification applications. Its exceptional characteristics make it ideal for applications where fast switching speeds, low voltage and power consumption, and high efficiency are required. With its widespread use in the automotive, industrial, and consumer electronics sectors, this device is sure to remain a popular choice among designers and engineers into the future.
The specific data is subject to PDF, and the above content is for reference
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