3EZ75D5/TR8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	75V
Tolerance:	±5%
Power - Max:	3W
Impedance (Max) (Zzt):	85 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 56V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	3EZ75

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Introduction to 3EZ75D5/TR8 Zener Diode

A Zener diode is a type of semiconductor device which utilizes the reverse bias voltage breakdown phenomenon. The 3EZ75D5/TR8 is a single Zener diode with breakdown voltage of 6.8V@ 5mA and 75mW of power. It is manufactured in a DO35 package and is made up of silicon material.

Application Fields of 3EZ75D5/TR8

The 3EZ75D5/TR8 Zener diode has a wide range of applications, making it widely used in many different circuits.

• Power Supply Regulation: 3EZ75D5/TR8 is widely used for voltage regulation in power supplies for low voltage circuits.
• Surge Protection: These diodes can be used to protect circuits from voltage spikes, which can occur in power supplies and data signals.
• Signal Rectification: They are also used for AC/DC rectification and to protect electronic circuits from high voltage signals.
• Clipping: The 3EZ75D5/TR8 diodes can be used in clippers which limit the amplitude of an electrical signal.
• Power Control: They can also be used to control the power in electrical circuits.

Working Principle of 3EZ75D5/TR8

The 3EZ75D5/TR8 Zener diode works on the principle of Reverse Bias Voltage Breakdown Phenomenon. When a reverse biased voltage is applied to the diode, electrons are strongly attracted to the P-type material, and holes are strongly attracted to the N-type material. The effect of this attraction is very strong and the electrons and holes collide with each other creating electron-hole pairs. This increased density of charge carriers in the junction builds up a voltage drop, which in turn increases the electric field intensity. When this electric field intensity exceeds a certain value (the breakdown voltage), the valence electrons in the depletion region are pushed across the junction and are injected into the P-type material. This process is known as Zener Avalanche breakdown, and this is the principle of Zener diodes. Once the breakdown has occurred, a large current can flow through the diode and the voltage across the diode remains relatively constant. This is because the potential barrier of the junction is lowered as the applied voltage increases, allowing more charge carriers to flow through the junction. This action keeps the voltage across the diode\'s junction relatively constant.

Conclusion

The 3EZ75D5/TR8 Zener diode is a single Zener diode with a breakdown voltage of 6.8V@ 5mA and 75mW of power. It is manufactured in a DO35 package and is made up of silicon material. The 3EZ75D5/TR8 diodes can be widely used for power supplies, surge protection, signal rectification, clipping and power control. They work on the principle of Reverse Bias Voltage Breakdown Phenomenon and are able to maintain a relatively constant voltage across their junction.

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