3EZ8.2D2E3/TR12

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Diodes - Zener - Single

A Zener diode is a type of diode that permits current to flow in reverse direction with a specific reverse-biased voltage applied to it. In the 3EZ8.2D2E3/TR12 application field a Zener diode is used to maintain a constant voltage across a circuit. As long as the reverse bias voltage applied to the Zener diode is greater than the specified voltage, the diode won’t conduct current.

Working Principle

Zener diodes rely on the breakdown of a semiconductor junction, causing a very rapid increase in current through the diode. This effect is called Zener breakdown, and it happens when the breakdown voltage of the junction on the Zener diode is exceeded. When the Zener diode is reversed biased, it exhibits a reverse breakdown voltage (Vz), at which point the voltage drops instantaneously. The voltage of the breakdown is nearly constant, regardless of the current flowing through the diode.

When the 3EZ8.2D2E3/TR12 is connected to a circuit in the reverse-bias direction, the voltage across it is specifically set by the Zener diode’s breakdown voltage, no matter how much the current changes. This is due to its limited amount of internal resistance, or resistance to class zero (r0). It is this unique characteristic that makes Zener diodes incredibly useful in many electronic components.

The most essential part of a Zener diode is the semiconductor junction between two different materials, in this case a p-n junction. A bias is applied where the p-type material and n-type material meet. If the applied bias is reverse biased, meaning the n-type material is connected to the positive terminal and the p-type material is connected to the negative terminal, the Zener diode will not conduct at first. If the applied reverse bias is greater than the Zener diode’s breakdown voltage, the diode will begin to conduct. When connected in forward-bias direction, the diode behaves like a normal diode, allowing current to flow in one direction.

There are two parameters that are important to consider when selecting a Zener diode for a given application. The first is the breakdown voltage (Vz) which is the most important parameter. It defines the voltage that must be exceeded for the semiconductor junction to break down, allowing current to flow from the negative terminal to the positive terminal. The other parameter is the power dissipation (Pd). Power dissipation is a measure of how much power the diode can handle. It is important to make sure the diode is able to dissipate the required power. If the power rating is exceeded, the diode may be permanently damaged.

The 3EZ8.2D2E3/TR12 Zener diode is a single diode specially designed for high-frequency applications. It offers excellent thermal stability and high reliability. Its low forward voltage drop provides superior performance in low power applications. Its rugged construction and superior heat dissipation make it suitable for low-loss voltage control applications.

In summary, the 3EZ8.2D2E3/TR12 Zener diode is a single diode specifically designed for high-frequency applications. Its breakdown voltage of 8.2V and reverse current of 1.5mA make it ideal for low power applications. Its excellent thermal stability and high reliability make it suitable for low-loss voltage control applications. It is essential to consider its breakdown voltage (Vz) and power dissipation (Pd) when selecting this type of diode.

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