3SMAJ5949B-TP

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The 3SMAJ5949B-TP is a silicon, planar, Zener diode that offers a wide range of applications. It is a single diode and has a voltage, range of 5.1V to 59V. The package type of this diode is a SMAJ while the power dissipation (PD) is 500mW. The 3SMAJ5949B-TP has a maximum reverse voltage (VR) of 59V, a forward voltage (VF) of 1.1V maximum and an operating temperature range of -55°C to +150°C.

The 3SMAJ5949B-TP finds applications mainly in the field of overvoltage protection, as well as general purpose rectification and voltage regulation. Its fast switching speed and low on-resistances makes it an ideal component for many different types of voltage regulating and protection requirements. In addition, it can be used as a reference Zener diode for the detection of the presence of low voltages.

The 3SMAJ5949B-TP is an epitaxial planar device and uses the avalanche breakdown mechanism to generate its Zener voltage. This type of diode is capable of generating extremely stable voltage levels and is often used as a reference voltage in a variety of electronic devices and circuits. When a reverse voltage is applied to the 3SMAJ5949B-TP diode, it breaks down in the avalanche mode, due to the electric field. The breakdown voltage of a diode is determined by the doping concentration of the N-type region, which allows the electric field to build up and eventually exceed the breakdown threshold.

The 3SMAJ5949B-TP is also a highly reliable device that offers excellent temperature stability as well as low noise and no leakage. Its low leakage current ensures minimal power loss and higher efficiency in various power supply applications. The package of this diode is designed for excellent thermal management and heat dissipation, allowing for greater system reliability and longer shelf life. The 3SMAJ5949B-TP diode can be used for a variety of conditions, making it the perfect choice for all your Zener diode needs.

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