47C16-E/ST Allicdata Electronics
Allicdata Part #:

47C16-E/ST-ND

Manufacturer Part#:

47C16-E/ST

Price: $ 0.60
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EERAM 16K I2C 1MHZ 8TSSOP
More Detail: EEPROM, SRAM Memory IC 16Kb (2K x 8) I²C 1MHz 400n...
DataSheet: 47C16-E/ST datasheet47C16-E/ST Datasheet/PDF
Quantity: 95
1 +: $ 0.54810
25 +: $ 0.52567
Stock 95Can Ship Immediately
$ 0.6
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EERAM
Technology: EEPROM, SRAM
Memory Size: 16Kb (2K x 8)
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 1ms
Access Time: 400ns
Memory Interface: I²C
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Description

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47C16-E/ST Application Field and Working Principle

47C16-E/ST is a memory device that is used in a variety of applications. It is a 16-bit (16-level cell) device constructed with a dynamic random access memory (DRAM) design, and it is typically used in applications that require fast storage and retrieval of data, or products that require data to be stored for a certain period of time.

The 47C16-E/ST is a low-cost memory device, and it is often used in high-end industrial applications, military products, and professional electronics applications. It is also popular in consumer electronics because it is considered to be a reliable source for storage and data retrieval. The 47C16-E/ST is compatible with JTAG, I2C, and SPI interface, and it can be used in a wide variety of applications, from personal computers to mobile phones, digital cameras, and automotive products.

In terms of its working principle, the 47C16-E/ST is based on the same DRAM design that is used in other DRAM compatible memory devices. It is composed of memory cells, which are arranged in rows and columns and are referred to as columns. Each cell contains a single bit of data, which can be either 0 or 1. The cells are connected in a matrix fashion, with an electrical connection between each cell and the other cells in its row and column. When a row or column of memory cells is activated, the data in those cells are retrieved. This is the same process that is used in other DRAM compatible memory devices, such as Dynamic RAM (DRAM), Synchronous Dynamic RAM (SDRAM), and SU-RAM.

In addition to its low-cost and high-speed advantages, the 47C16-E/ST offers other benefits as well. For example, it has an on-board error correction system, which helps to reduce the amount of errors that occur with the memory cell. It also has an integrated data bus, which is used to connect multiple devices to the device, and it can support a wide variety of interface standards. Finally, the 47C16-E/ST is a low-power memory device, meaning that it consumes less power than other DRAM compatible memory devices.

Overall, the 47C16-E/ST is a reliable and cost-effective memory device that is suitable for use in a variety of applications. Its low-cost, high-speed, and low-power features make it a suitable choice for many different products and applications. Furthermore, its integrated error correction system and data bus compatibility make it a great choice for products that need reliable, fast, and low-cost data storage and retrieval.

The specific data is subject to PDF, and the above content is for reference

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