47C16T-I/SN

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47C16T-I/SN is a type of memory specifically designed for application in areas of high temperature, which is able to maintain reliable operating performance within temperatures ranging from -40 degrees Celsius to 125 degrees Celsius. The device comes in two versions – the 16Mbit TFD and the 24Mbit EDM – both of which are organized into 8K x16 configurations, while they use standard 64-pin TSOPII packages.

The 47C16T-I/SN memory device is best suited for automotive, industrial, and aerospace applications where reliable storage within varying temperatures is required. It is a nonvolatile memory which can retain stored information even if the power is cut off, making it an ideal storage option for controlling systems and situations K17F where changing external conditions could potentially lead to data loss. As a result, the device has been widely adopted in the consumer, industrial, and avionics markets, allowing for advanced information access and data processing.

The working principle of the 47C16T-I/SN is quite straightforward. The device works on the principle of split-gate floating gate technology, in which electrons are trapped between the two gates. This process is used to store data bits and can be accessed by sending a voltage pulse across the two gates. The two gates are separated by a thin dielectric material that is both durable and reliable, and is usually made from polysilicon.

When an electrical read cycle is conducted, a voltage is applied to the underlying transistor, causing electrons to move from the floating gate to the control gate. The amount of charge that is transferred depends on the data bit stored in the cell. If a binary 0 is stored, it will be read as a ‘0’, while a 1 is read as a ‘1’. Similarly, a write cycle can be used to store data in the cell by controlling the amount of electrons that are transferred.

The 47C16T-I/SN memory offers a number of advantages that make it an ideal choice for temperature-sensitive applications. The device comes with an on-chip error-correcting code (ECC) which ensures high performance and accuracy, and it is also capable of performing bit-level error detection and correction. This can result in fewer write cycles and less susceptibility to corruption, making the device a reliable choice for applications that require precise data processing and information retrieval.

The 47C16T-I/SN memory device offers users the highest levels of endurance in terms of data retention and reliability. It is capable of operating reliably at temperatures ranging from -40 degrees Celsius to 125 degrees Celsius, and can remain operational for up to 100000 read/write cycles. The device also has a minimal standby current, making it ideal for energy-sensitive applications, and it features an Ultra Low Power Mode which enhances the device’s already impressive power savings.

The 47C16T-I/SN device is an ideal choice for applications such as industrial automation, automotive electronics, aerospace, medical, and military systems. Its ability to maintain reliable performance across a wide temperature range and provide a high level of data integrity makes it an excellent memory device for these applications. This device is also ideal for applications where high levels of data accuracy and long-term storage is required and where energy savings are a priority.

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