495220TU Allicdata Electronics
Allicdata Part #:

495220TU-ND

Manufacturer Part#:

495220TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 325V 4A TO-220
More Detail: Bipolar (BJT) Transistor NPN - Darlington 325V 4A ...
DataSheet: 495220TU datasheet495220TU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 325V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2A
Current - Collector Cutoff (Max): 5mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 5V
Power - Max: 40W
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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495220TU application field and working principle

495220TU is a type of transistor belonging to the single bipolar junction transistor (BJT) category. It is a general-purpose NPN BJT transistor. The device is designed for small-signal switching applications, such as amplifying and switching. It is made with the alloy-junction process for superior alpha-cutoff frequency.

The main application fields of 495220TU transistors include consumer electronics, automotive, computing, audio, and communications systems. The transistor can be used in signal detection signal generation, signal pre-emphasis and passive filtering. In industrial applications, it is also used in RFI shields, frequency encoding, and current sensor circuit protection.

As far as working principle goes, 495220TU transistors are made of three parts: the base, the emitter, and the collector. The base is located in between the emitter and the collector. There is a high voltage potential between the emitter and the base junction and between the base and collector junction. This potential difference determines the current flow between the emitter and the collector.

The current flow is controlled by the base current. When there is a small current applied to the base, a large current flows from the emitter to the collector allowing the device to act as an amplifier. The current gain of the transistor is measured by Alpha(α) or hfe, which is the ratio of the collector current to the base current when the collector-emitter voltage is kept constant.

The 495220TU transistor is a low-power device, and it does not require a lot of current to operate. It operates with a low noise level and minimal distortion, which makes it suitable for a variety of applications. It can be used in circuits with high power dissipation and large current capacities.

495220TU transistors are also very reliable, and they can handle large transient currents while maintaining superior thermal resistance. The transistor\'s epoxy encapsulation increases its dielectric strength and provides the device with a more reliable form of protection. This device is built with an improved HICUM parameter. This allows the transistor to be more stable, efficient and reliable.

To sum up, the 495220TU transistor has many advantages and benefits which make it a popular choice for a range of applications. Its ability to handle large current capacities and provide reliable protection make it an ideal choice for a variety of consumer electronics, automotive and computing applications. Its low power requirements and minimal distortion makes it suitable for a range of audio and communications systems.

The specific data is subject to PDF, and the above content is for reference

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