
Allicdata Part #: | 5082-2810#T25-ND |
Manufacturer Part#: |
5082-2810#T25 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY SINGLE 20V AXIAL |
More Detail: | RF Diode Schottky - Single 20V 35mA 250mW |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - Single |
Voltage - Peak Reverse (Max): | 20V |
Current - Max: | 35mA |
Capacitance @ Vr, F: | 1.2pF @ 0V, 1MHz |
Resistance @ If, F: | -- |
Power Dissipation (Max): | 250mW |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 5082-2810#T25 is a type of diode device used in radio frequency (RF) applications. This article will discuss its specific application in the field and explain its working principle.
Application Field and Uses
The 5082-2810#T25 is specifically designed for use in high-power RF applications. This type of diode is used in a variety of applications, ranging from high-power amplifiers and oscillators to switched-mode power supply circuits and electrical power robustness. Its deep voltage drop and wide bias range make it especially suitable for these applications.
In terms of its specific uses, the 5082-2810#T25 diode can be used to build extreme high-power amplifier designs, linear amplifiers, and pulsed RF applications. These uses have been demonstrated on a variety of platforms, such as low-noise amplifiers, rf power amplifiers, and individual element configurations.
Working Principle
The 5082-2810#T25 diode is a junction type and makes use of a typical PN-junction type circuit to function. In simpler terms, current flows through the diode in one direction and is blocked when the direction is reversed. This principle of operation is what makes the 5082-2810#T25 diode an ideal choice for high-power applications.
The 5082-2810#T25 diode also utilizes a novel switching technique, known as the “snap back” method. In this technique, current is delivered to the device in a fast, controlled manner and then quickly switched off to prevent further current flow. This makes the 5082-2810#T25 diode highly efficient and capable of handling very large amounts of power.
Advantages
The 5082-2810#T25 diode has many advantages to offer its users. One major benefit of this diode is its extreme reliability; it is capable of functioning reliably in harsh environments and long-term applications. Additionally, this diode has excellent linearity and minimal distortion, meaning it can be used for a variety of applications without fear of losing the quality of its signals. Because the 5082-2810#T25 does not require external components for its operation, it is also very cost effective.
Conclusion
The 5082-2810#T25 diode is a specialized RF diode that is designed for use in high-power applications. Its novel switching technique, good linearity, and extreme reliability make it an ideal choice for many different types of applications. Its cost efficiency also makes it a viable option when compared to other diode types.
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